by Atuchin, V.V., Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Galashov, E.N., Khyzhun, O.Y., Bekenev, V.L., Pokrovsky, L.D., Borovlev, Yu.A., Zhdankov, V.N.
Published in Journal of solid state chemistry (15.04.2016)

by Atuchin, Victor V., Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Goloshumova, Alina A., Isaenko, Ludmila I., Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090, Jiang, Xingxing, University of Chinese Academy of Sciences, Beijing 100049, Lobanov, Sergey I., Zhang, Zhaoming, Lin, Zheshuai
Published in Journal of solid state chemistry (15.04.2016)

by Zhao, Pei, Murshed, M. Mangir, Alekseev, Evgeny V., Atuchin, V.V., Pugachev, Alexey M., Gesing, Thorsten M.
Published in Materials research bulletin (01.12.2014)

by Lim, Chang Sung, Aleksandrovsky, Aleksandr, Department of Photonics and Laser Technologies, Siberian Federal University, Krasnoyarsk 660079, Molokeev, Maxim, Department of Physics, Far Eastern State Transport University, Khabarovsk 680021, Oreshonkov, Aleksandr, Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Atuchin, Victor, Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090
Published in Journal of solid state chemistry (15.08.2015)

by Ji, Haipeng, Huang, Zhaohui, Xia, Zhiguo, Xie, Yao, Molokeev, Maxim S., Department of Physics, Far Eastern State Transport University, Khabarovsk 680021, Atuchin, Victor V., Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090
Published in Materials research bulletin (15.03.2016)

by Atuchin, V.V., Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Golyashov, V.A., Novosibirsk State University, Novosibirsk 630090, Kokh, K.A., Laboratory of Nanostructured Surfaces, Tomsk State University, Tomsk 634050, Spintronics Laboratory, Saint Petersburg State University, Saint Petersburg 198504, Korolkov, I.V., Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Kozhukhov, A.S., Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Kruchinin, V.N., Loshkarev, I.D., Pokrovsky, L.D., Prosvirin, I.P., Boreskov Institute of Catalysis, SB RAS, Novosibirsk 630090
Published in Journal of solid state chemistry (15.04.2016)

by Savina, A.A., Department of Chemistry, Buryat State University, Ulan-Ude 670000, Atuchin, V.V., Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Solodovnikov, S.F., Department of Natural Sciences, Novosibirsk State University, Novosibirsk 630090, Solodovnikova, Z.A., Krylov, A.S., Maximovskiy, E.A., Laboratory of Research Methods of Composition and Structure of Functional Materials, Novosibirsk State University, Novosibirsk 630090, Molokeev, M.S., Oreshonkov, A.S, Department of Photonics and Laser Technology, Siberian Federal University, Krasnoyarsk 660079, Pugachev, A.M.
Published in Journal of solid state chemistry (15.05.2015)