Structural and electrical characteristics of ion-induced Si damage during atomic layer etching
Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Hagimoto, Yoshiya, Iwamoto, Hayato
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
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High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms
Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar Unico, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato
Published in Japanese Journal of Applied Physics (01.07.2023)
Published in Japanese Journal of Applied Physics (01.07.2023)
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Journal Article
Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation
Mizotani, Kohei, Isobe, Michiro, Fukasawa, Masanaga, Nagahata, Kazunori, Tatsumi, Tetsuya, Hamaguchi, Satoshi
Published in Journal of physics. D, Applied physics (22.04.2015)
Published in Journal of physics. D, Applied physics (22.04.2015)
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Advanced simulation technology for etching process design for CMOS device applications
Kuboi, Nobuyuki, Fukasawa, Masanaga, Tatsumi, Tetsuya
Published in Japanese Journal of Applied Physics (01.07.2016)
Published in Japanese Journal of Applied Physics (01.07.2016)
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Journal Article
Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas
Miyake, Keita, Ito, Tomoko, Isobe, Michiro, Karahashi, Kazuhiro, Fukasawa, Masanaga, Nagahata, Kazunori, Tatsumi, Tetsuya, Hamaguchi, Satoshi
Published in Japanese Journal of Applied Physics (01.03.2014)
Published in Japanese Journal of Applied Physics (01.03.2014)
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Journal Article
Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection
Li, Hu, Karahashi, Kazuhiro, Friederich, Pascal, Fink, Karin, Fukasawa, Masanaga, Hirata, Akiko, Nagahata, Kazunori, Tatsumi, Tetsuya, Wenzel, Wolfgang, Hamaguchi, Satoshi
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
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Journal Article
Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
Minami, Masaki, Tomiya, Shigetaka, Ishikawa, Kenji, Matsumoto, Ryosuke, Chen, Shang, Fukasawa, Masanaga, Uesawa, Fumikatsu, Sekine, Makoto, Hori, Masaru, Tatsumi, Tetsuya
Published in Jpn J Appl Phys (01.08.2011)
Published in Jpn J Appl Phys (01.08.2011)
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Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
Nakakubo, Yoshinori, Matsuda, Asahiko, Fukasawa, Masanaga, Takao, Yoshinori, Tatsumi, Tetsuya, Eriguchi, Koji, Ono, Kouichi
Published in Japanese Journal of Applied Physics (01.08.2010)
Published in Japanese Journal of Applied Physics (01.08.2010)
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Journal Article
Numerical Simulation Method for Plasma-Induced Damage Profile in SiO2 Etching
Kuboi, Nobuyuki, Tatsumi, Tetsuya, Kobayashi, Shoji, Komachi, Jun, Fukasawa, Masanaga, Kinoshita, Takashi, Ansai, Hisahiro
Published in Jpn J Appl Phys (01.11.2011)
Published in Jpn J Appl Phys (01.11.2011)
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Journal Article
Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System
Fukasawa, Masanaga, Kawashima, Atsushi, Kuboi, Nobuyuki, Takagi, Hitoshi, Tanaka, Yasuhito, Sakayori, Hiroyuki, Oshima, Keiji, Nagahata, Kazunori, Tatsumi, Tetsuya
Published in Japanese Journal of Applied Physics (01.08.2009)
Published in Japanese Journal of Applied Physics (01.08.2009)
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Journal Article
Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
Fukasawa, Masanaga, Matsugai, Hiroyasu, Honda, Takahiro, Miyawaki, Yudai, Kondo, Yusuke, Takeda, Keigo, Kondo, Hiroki, Ishikawa, Kenji, Sekine, Makoto, Nagahata, Kazunori, Uesawa, Fumikatsu, Hori, Masaru, Tatsumi, Tetsuya
Published in Japanese Journal of Applied Physics (01.05.2013)
Published in Japanese Journal of Applied Physics (01.05.2013)
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Journal Article
Reducing Damage to Si Substrates during Gate Etching Processes
Ohchi, Tomokazu, Kobayashi, Shoji, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Kinoshita, Takashi, Takizawa, Toshifumi, Hamaguchi, Satoshi, Kamide, Yukihiro, Tatsumi, Tetsuya
Published in Japanese Journal of Applied Physics (01.07.2008)
Published in Japanese Journal of Applied Physics (01.07.2008)
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Journal Article
Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation
Fukasawa, Masanaga, Miyawaki, Yudai, Kondo, Yusuke, Takeda, Keigo, Kondo, Hiroki, Ishikawa, Kenji, Sekine, Makoto, Matsugai, Hiroyasu, Honda, Takayoshi, Minami, Masaki, Uesawa, Fumikatsu, Hori, Masaru, Tatsumi, Tetsuya
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Analysis of Plasma Wall Reactions Using Virtual Optical Emission Spectrometry Signal during Dielectric Etching
Kuboi, Nobuyuki, Fukasawa, Masanaga, Kawashima, Atsushi, Oshima, Keiji, Nagahata, Kazunori, Tatsumi, Tetsuya
Published in Japanese Journal of Applied Physics (01.08.2010)
Published in Japanese Journal of Applied Physics (01.08.2010)
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Journal Article