Precise understanding of data retention mechanisms for MONOS memories: Toward simultaneous improvement of retention and endurance performances by SiN engineering
Fujii, S, Fujitsuka, R, Sekine, K, Yasuda, N
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Get full text
Conference Proceeding
Transition of erase mechanism for MONOS memory depending on SiN composition and its impact on cycling degradation
Fujii, S, Fujiki, J, Yasuda, N, Fujitsuka, R, Sekine, K
Published in 2010 IEEE International Reliability Physics Symposium (01.01.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.01.2010)
Get full text
Conference Proceeding
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
WAKISAKA YUKI, FUJII MIKI, TORAYA KENICHIRO, KATO KAIHEI, HATANO KAZUYA, FUJITA JUNYA, FUJITSUKA RYOTA, FUKUSHIMA TAKASHI, FUKUMOTO ATSUSHI
Year of Publication 06.09.2023
Get full text
Year of Publication 06.09.2023
Patent
SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
OKADA TAKAYUKI, ISHIGAKI HIROKAZU, YAMANAKA TAKANORI, FUJITSUKA RYOTA, YAMADA KENTA
Year of Publication 24.09.2020
Get full text
Year of Publication 24.09.2020
Patent
SEMICONDUCTOR MANUFACTURING APPARATUS, WAFER TRANSFER APPARATUS, AND WAFER TRANSFER METHOD
AISO FUMIKI, IINO TOMOHISA, MATSUI TAKAYUKI, FUJITSUKA RYOTA, TAKAHASHI KENSEI
Year of Publication 22.03.2019
Get full text
Year of Publication 22.03.2019
Patent
Successful suppression of dielectric relaxation inherent to high-k NAND from both architecture and material points of view
Jun Fujiki, Yasuda, N., Fujitsuka, R., Sakamoto, W., Muraoka, K.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Get full text
Conference Proceeding
Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal--Oxide--Nitride--Oxide--Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation
Fujitsuka, Ryota, Sekine, Katsuyuki, Sekihara, Akiko, Fukumoto, Atsushi, Fujita, Junya, Aiso, Fumiki, Ozawa, Yoshio
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
Get full text
Journal Article
Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal–Oxide–Nitride–Oxide–Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation
Fujitsuka, Ryota, Sekine, Katsuyuki, Sekihara, Akiko, Fukumoto, Atsushi, Fujita, Junya, Aiso, Fumiki, Ozawa, Yoshio
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
Get full text
Journal Article