Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers
Fujie, Fumihiro, Shiono, Tsubasa, Murata, Koichi, Ishibashi, Naoto, Mabuchi, Yuichiro, Tsuchida, Hidekazu
Published in Journal of applied physics (21.06.2024)
Published in Journal of applied physics (21.06.2024)
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Journal Article
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC
Fujie, Fumihiro, Peng, Hongyu, Ailihumaer, Tuerxun, Raghothamachar, Balaji, Dudley, Michael, Harada, Shunta, Tagawa, Miho, Ujihara, Toru
Published in Acta materialia (15.04.2021)
Published in Acta materialia (15.04.2021)
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Journal Article
Nondestructive visualization of threading dislocations in GaN by micro raman mapping
Kokubo, Nobuhiko, Tsunooka, Yosuke, Fujie, Fumihiro, Ohara, Junji, Onda, Shoichi, Yamada, Hisashi, Shimizu, Mitsuaki, Harada, Shunta, Tagawa, Miho, Ujihara, Toru
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy
Kokubo, Nobuhiko, Tsunooka, Yosuke, Inotsume, Sho, Fujie, Fumihiro, Onda, Shoichi, Yamada, Hisashi, Shimizu, Mitsuaki, Harada, Shunta, Tagawa, Miho, Ujihara, Toru
Published in Japanese Journal of Applied Physics (01.01.2021)
Published in Japanese Journal of Applied Physics (01.01.2021)
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Journal Article
Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping
Kokubo, Nobuhiko, Tsunooka, Yosuke, Fujie, Fumihiro, Ohara, Junji, Onda, Shoichi, Yamada, Hisashi, Shimizu, Mitsuaki, Harada, Shunta, Tagawa, Miho, Ujihara, Toru
Published in Applied physics express (01.11.2018)
Published in Applied physics express (01.11.2018)
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Journal Article
Detection of edge component of threading dislocations in GaN by Raman spectroscopy
Kokubo, Nobuhiko, Tsunooka, Yosuke, Fujie, Fumihiro, Ohara, Junji, Hara, Kazukuni, Onda, Shoichi, Yamada, Hisashi, Shimizu, Mitsuaki, Harada, Shunta, Tagawa, Miho, Ujihara, Toru
Published in Applied physics express (01.06.2018)
Published in Applied physics express (01.06.2018)
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Journal Article
Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
Fujie, Fumihiro, Harada, Shunta, Hanada, Kenji, Suo, Hiromasa, Koizumi, Haruhiko, Kato, Tomohisa, Tagawa, Miho, Ujihara, Toru
Published in Acta materialia (01.08.2020)
Published in Acta materialia (01.08.2020)
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Journal Article
Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X‐ray topographs under the condition of g · b = 0 and g · b × l = 0
Peng, Hongyu, Ailihumaer, Tuerxun, Fujie, Fumihiro, Chen, Zeyu, Raghothamachar, Balaji, Dudley, Michael
Published in Journal of applied crystallography (01.04.2021)
Published in Journal of applied crystallography (01.04.2021)
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Journal Article
Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals
Ailihumaer, Tuerxun, Peng, Hongyu, Fujie, Fumihiro, Raghothamachar, Balaji, Dudley, Michael, Harada, Shunta, Ujihara, Toru
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.09.2021)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.09.2021)
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Journal Article
Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography
Fujie, Fumihiro, Harada, Shunta, Suo, Hiromasa, Raghothamachar, Balaji, Dudley, Michael, Hanada, Kenji, Koizumi, Haruhiko, Kato, Tomohisa, Tagawa, Miho, Ujihara, Toru
Published in Materialia (01.12.2021)
Published in Materialia (01.12.2021)
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Journal Article
Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method
Fujie, Fumihiro, Tagawa, Miho, Hanada, Kenji, Murai, Ryota, Zhu, Can, Ujihara, Toru, Murayama, Kenta, Harada, Shunta, Liu, Xin Bo
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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