Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices
Nepal, Neeraj, Wheeler, Virginia D, Anderson, Travis J, Kub, Francis J, Mastro, Michael A, Myers-Ward, Rachael L, Qadri, Syed B, Freitas, Jaime A, Hernandez, Sandra C, Nyakiti, Luke O, Walton, Scott G, Gaskill, Kurt, Eddy, Charles R
Published in Applied physics express (01.06.2013)
Published in Applied physics express (01.06.2013)
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Journal Article
Efficient Incorporation of Mg in Solution Grown GaN Crystals
Freitas, Jaime A, Feigelson, Boris N, Anderson, Travis J
Published in Applied physics express (01.11.2013)
Published in Applied physics express (01.11.2013)
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Journal Article
Surface morphology and optical property of thermally annealed GaN substrates
Oh, Dong Keun, Bang, Sin Young, Choi, Bong Geun, Maneeratanasarn, P., Lee, Seong Kuk, Chung, Jin Hyun, Freitas, Jaime A., Shim, Kwang Bo
Published in Journal of crystal growth (01.10.2012)
Published in Journal of crystal growth (01.10.2012)
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Journal Article
Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors
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Journal Article
Conference Proceeding
Plasmonically enhanced emission from a group-III nitride nanowire emitter
Mastro, Michael A, Freitas Jr, Jaime A, Glembocki, Orest, Eddy Jr, Charles R, Holm, R T, Henry, Rich L, Caldwell, Josh, Rendell, Ronald W, Kub, Fritz, Kim, J
Published in Nanotechnology (04.07.2007)
Published in Nanotechnology (04.07.2007)
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Journal Article
Controlled synthesis of single-crystalline InN nanorods
Kryliouk, Olga, Park, Hyun Jong, Won, Yong Sun, Anderson, Tim, Davydov, Albert, Levin, Igor, Kim, Ji Hyun, Freitas Jr, Jaime A
Published in Nanotechnology (04.04.2007)
Published in Nanotechnology (04.04.2007)
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Journal Article
Towards a polariton-based light emitter based on non-polar GaN quantum wells
Mastro, Michael A., Imhoff, Eugene A., Freitas, Jaime A., Hite, Jennifer K., Eddy, Charles R.
Published in Solid state communications (01.12.2009)
Published in Solid state communications (01.12.2009)
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Journal Article
Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres
Tadjer, Marko J, Freitas, Jaime A, Culbertson, James C, Weber, Marc H, Glaser, Evan R, Mock, Alyssa L, Mahadik, Nadeemullah A, Schmieder, Kenneth, Jackson, Eric, Gallagher, James C, Feigelson, Boris N, Kuramata, Akito
Published in Journal of physics. D, Applied physics (09.12.2020)
Published in Journal of physics. D, Applied physics (09.12.2020)
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Journal Article
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
Tadjer, Marko J, Alema, Fikadu, Osinsky, Andrei, Mastro, Michael A, Nepal, Neeraj, Woodward, Jeffrey M, Myers-Ward, Rachael L, Glaser, Evan R, Freitas, Jaime A, Jacobs, Alan G, Gallagher, James C, Mock, Alyssa L, Pennachio, Daniel J, Hajzus, Jenifer, Ebrish, Mona, Anderson, Travis J, Hobart, Karl D, Hite, Jennifer K, Eddy Jr, Charles R
Published in Journal of physics. D, Applied physics (21.01.2021)
Published in Journal of physics. D, Applied physics (21.01.2021)
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Journal Article
Nitride Semiconductors
Freitas Jr, Jaime A., Wetzel, Christian, Eddy Jr, Charles R., Khan, Asif
Published in Physica status solidi. C (01.04.2014)
Published in Physica status solidi. C (01.04.2014)
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Journal Article
Residual impurities in GaN substrates and epitaxial layers grown by various techniques
Murthy, Madhu, Freitas, Jaime A., Kim, Jihyun, Glaser, Evan R., Storm, David
Published in Journal of crystal growth (15.07.2007)
Published in Journal of crystal growth (15.07.2007)
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Journal Article
Conference Proceeding
Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition
Avila, Jason R, Qadri, Syed B, Freitas, Jaime A, Nepal, Neeraj, Boris, David R, Walton, Scott G, Eddy, Charles R, Wheeler, Virginia D
Published in Chemistry of materials (11.06.2019)
Published in Chemistry of materials (11.06.2019)
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Journal Article
Experimental study of plasmonically enhanced GaN nanowire light emitters
Mastro, Michael A., Freitas Jr, Jaime A., Twigg, Mark, Holm, R. T., Eddy Jr, Charles R., Kub, Fritz, Kim, Hong-Yeol, Ahn, Jaehui, Kim, Jihyun
Published in Physica status solidi. A, Applications and materials science (01.02.2008)
Published in Physica status solidi. A, Applications and materials science (01.02.2008)
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Journal Article
Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures
Freitas, Jaime A., Weaver, Bradley D., Koehler, Andrew D., Gallagher, James C., Anderson, Travis J.
Published in physica status solidi (b) (01.04.2020)
Published in physica status solidi (b) (01.04.2020)
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Journal Article
Some effects of oxygen impurities on AlN and GaN
Slack, Glen A., Schowalter, Leo J., Morelli, Donald, Freitas, Jaime A.
Published in Journal of crystal growth (01.12.2002)
Published in Journal of crystal growth (01.12.2002)
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Journal Article
Conference Proceeding
Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
Tadjer, Marko J., Feigelson, Boris N., Greenlee, Jordan D., Freitas, Jaime A., Anderson, Travis J., Hite, Jennifer K., Ruppalt, Laura, Eddy, Charles R., Hobart, Karl D., Kub, Fritz J.
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
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Journal Article