IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n+-GaAs charge-control layers
Arch, D.K., Abrokwah, J.K., Vold, P.J., Fraasch, A.M., Daniels, R.R., Cirillo, N.C., Shur, M.S., Xu, J.
Published in IEEE transactions on electron devices (01.11.1986)
Published in IEEE transactions on electron devices (01.11.1986)
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