A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
Xiongfei Yu, Chunxiang Zhu, Hang Hu, Chin, A., Li, M.F., Byung Jin Cho, Dim-Lee Kwong, Foo, P.D., Ming Bin Yu
Published in IEEE electron device letters (01.02.2003)
Published in IEEE electron device letters (01.02.2003)
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Journal Article
Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S.
Published in Thin solid films (10.05.2006)
Published in Thin solid films (10.05.2006)
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Conference Proceeding
Ta/SiCN bilayer barrier for Cu–ultra low k integration
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Conference Proceeding
MIM capacitors using atomic-layer-deposited high-/spl kappa/ (HfO2)/sub 1-x/(Al2O3)/sub x/ dielectrics
Hang Hu, Chunxiang Zhu, Xiongfei Yu, Chin, A., Li, M.F., Byung Jin Cho, Dim-Lee Kwong, Foo, P.D., Ming Bin Yu, Xinye Liu, Winkler, J.
Published in IEEE electron device letters (01.02.2003)
Published in IEEE electron device letters (01.02.2003)
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Journal Article
Characterization of Cu/Ta/ultra low- k porous polymer structures for multilevel interconnects
Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Wee, A.T.S., Foo, P.D.
Published in Thin solid films (01.09.2004)
Published in Thin solid films (01.09.2004)
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Journal Article
MIM capacitors using atomic-layer-deposited high-[kappa] (HfO2)1-x(Al2O3)x dielectrics
Hu, Hang, Zhu, Chunxiang, Yu, Xiongfei, Chin, A, Li, M.F, Cho, Byung Jin, Kwong, Dim-Lee, Foo, P.D, Yu, Ming Bin, Liu, Xinye, Winkler, J
Published in IEEE electron device letters (01.02.2003)
Published in IEEE electron device letters (01.02.2003)
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Journal Article
A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO 2 dielectrics
Xiongfei Yu, Chunxiang Zhu, Hang Hu, Chin, A., Li, M.F., Byung Jin Cho, Dim-Lee Kwong, Foo, P.D., Ming Bin Yu
Published in IEEE electron device letters (01.02.2003)
Published in IEEE electron device letters (01.02.2003)
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Journal Article
Improving electrical performance of Cu∕porous ultra-low k dielectrics single damascene lines
Yang, L.Y., Zhang, D.H., Li, C.Y., Wu, S.Y., Foo, P.D.
Published in Electronics letters (10.06.2004)
Published in Electronics letters (10.06.2004)
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Journal Article
Barrier-free direct-contact-via (DCV) structures for copper interconnects
Li, C.Y., Zhang, D.H., Wu, J.J., Qi, D.X., Su, S.S., Qian, Y., Chow, Y.F., Koh, L.T., Foo, P.D.
Published in Electronics letters (29.08.2002)
Published in Electronics letters (29.08.2002)
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Journal Article
Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM
Teh, W.H., Koh, L.T., Chen, S.M., Xie, J., Li, C.Y., Foo, P.D.
Published in Electronics letters (10.05.2001)
Published in Electronics letters (10.05.2001)
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Journal Article
IIIB-8 UPMOS-A new approach to submicrometer VLSI
Foo, P.D., Liu, R., Lebowitz, J., Orlowsky, K.J., Hillenius, S.J., Lynch, W.T.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
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