Exploring doped or vacancy-modified graphene-based electrodes for applications in asymmetric supercapacitors
da Silva, Débora A. C, Paulista Neto, Antenor J, Pascon, Aline M, Fileti, Eudes E, Fonseca, Leonardo R. C, Zanin, Hudson G
Published in Physical chemistry chemical physics : PCCP (19.02.2020)
Published in Physical chemistry chemical physics : PCCP (19.02.2020)
Get full text
Journal Article
First-principles study of A-site substitution in ferroelectric bismuth titanate
Xue, Kan-Hao, Fonseca, Leonardo R. C., Nishi, Yoshio
Published in Journal of materials science (01.09.2014)
Published in Journal of materials science (01.09.2014)
Get full text
Journal Article
A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in // Resistive Random Access Memory
Kan-Hao Xue, Traore, Boubacar, Blaise, Philippe, Fonseca, Leonardo R. C., Vianello, Elisa, Molas, Gabriel, De Salvo, Barbara, Ghibaudo, Gerard, Magyari-Kope, Blanka, Nishi, Yoshio
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
Get full text
Journal Article
Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles
Xue, Kan-Hao, Blaise, Philippe, Fonseca, Leonardo R C, Nishi, Yoshio
Published in Physical review letters (08.02.2013)
Published in Physical review letters (08.02.2013)
Get more information
Journal Article
Combined Density Functional Theory and Molecular Dynamics Simulations To Investigate the Effects of Quantum and Double-Layer Capacitances in Functionalized Graphene as the Electrode Material of Aqueous-Based Supercapacitors
da Silva, Débora A. C, Paulista Neto, Antenor J, Pascon, Aline M, Fileti, Eudes E, Fonseca, Leonardo R. C, Zanin, Hudson G
Published in Journal of physical chemistry. C (18.03.2021)
Published in Journal of physical chemistry. C (18.03.2021)
Get full text
Journal Article
Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- k/Metal Gate Stack Device Reliability and Performance Enhancement
Tseng Hsing-Huang, Tobin, P.J., Kalpat, S., Schaeffer, J.K., Ramon, M.E., Fonseca, L.R.C., Jiang, Z.X., Hegde, R.I., Triyoso, D.H., Semavedam, S.
Published in IEEE transactions on electron devices (01.12.2007)
Published in IEEE transactions on electron devices (01.12.2007)
Get full text
Journal Article
Improved LDA-1/2 method for band structure calculations in covalent semiconductors
Xue, Kan-Hao, Yuan, Jun-Hui, Fonseca, Leonardo R.C., Miao, Xiang-Shui
Published in Computational materials science (01.10.2018)
Published in Computational materials science (01.10.2018)
Get full text
Journal Article
A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory
Xue, Kan-Hao, Traoré, Boubacar, Blaise, Philippe, Fonseca, Leonardo, Vianello, Elisa, Molas, Gabriel, de Salvo, Barbara, Ghibaudo, Gérard, Magyari-Kope, Blanka, Nishi, Yoshio
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
Get full text
Journal Article
Improved self-energy correction method for accurate and efficient band structure calculation
Kan-Hao Xue, Jun-Hui, Yuan, Fonseca, Leonardo R C, Xiang-Shui Miao
Published in arXiv.org (31.01.2017)
Published in arXiv.org (31.01.2017)
Get full text
Paper
Journal Article
Prediction of semi-metallic tetragonal Hf2O3 and Zr2O3 from first-principles
Kan-Hao Xue, Blaise, Philippe, Fonseca, Leonardo R C, Nishi, Yoshio
Published in arXiv.org (11.10.2012)
Published in arXiv.org (11.10.2012)
Get full text
Paper
Journal Article
Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states
Patrocinio, Weslley S., Ribeiro, Mauro, Fonseca, Leonardo R.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.09.2012)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.09.2012)
Get full text
Journal Article
Understanding the conduction mechanism of the chalcogenide Ag2S silver-doped through ab initio simulation
Todorova, Tsanka Z., Blaise, Philippe, Vianello, Elisa, Fonseca, Leonardo R. C.
Published in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2013)
Published in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2013)
Get full text
Conference Proceeding
Ab initio simulation of $\mathrm{Ta_2O_5}$: A high symmetry ground state phase with application to interface calculation
Yuan, Jun-Hui, Xue, Kan-Hao, Chen, Qi, Fonseca, Leonardo R. C, Miao, Xiang-Shui
Year of Publication 12.12.2018
Year of Publication 12.12.2018
Get full text
Journal Article