The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFET
Foisy, M.C., Tasker, P.J., Hughes, B., Eastman, L.F.
Published in IEEE transactions on electron devices (01.07.1988)
Published in IEEE transactions on electron devices (01.07.1988)
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Journal Article
Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor
Nguyen, L.D., Schaff, W.J., Tasker, P.J., Lepore, A.N., Palmateer, L.F., Foisy, M.C., Eastman, L.F.
Published in IEEE transactions on electron devices (01.02.1988)
Published in IEEE transactions on electron devices (01.02.1988)
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Journal Article
Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa
Xiao-Feng Fan, Register, L.F., Winstead, B., Foisy, M.C., Wanqiang Chen, Xin Zheng, Ghosh, B., Banerjee, S.K.
Published in IEEE transactions on electron devices (01.02.2007)
Published in IEEE transactions on electron devices (01.02.2007)
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Journal Article
Multi-Layer Model for Stressor Film Deposition
Loiko, K.V., Adams, V., Tekleab, D., Winstead, B., Bo, X.-Z., Grudowski, P., Goktepeli, S., Filipiak, S., Goolsby, B., Kolagunta, V., Foisy, M.C.
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
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Conference Proceeding
Elevated temperature performance of pseudomorphic AlGaAs/InGaAs MODFETs
Zurek, S.J., Darling, R.B., Kuhn, K.J., Foisy, M.C.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
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Journal Article
Influence of quantum well width on DC and RF device performance in pseudomorphic Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As MODFETs
Nguyen, L.D., Radulescu, D.C., Tasker, P.J., Foisy, M.C., Eastman, L.F.
Published in IEEE transactions on electron devices (01.12.1988)
Published in IEEE transactions on electron devices (01.12.1988)
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Journal Article
Large-signal relaxation-time model for HEMTs and MESFETs
Foisy, M.C., Jeroma, P.E., Martin, G.H.
Published in 1992 IEEE MTT-S Microwave Symposium Digest (1992)
Published in 1992 IEEE MTT-S Microwave Symposium Digest (1992)
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Conference Proceeding
IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers
Chen, Y.K., Radulescu, D.C., Lepore, A.N., Foisy, M.C., Wang, G.W., Tasker, P.J., Eastman, L.F.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
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Journal Article
Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's)
Nguyen, L.D., Foisy, M.C., Tasker, P.J., Schaff, W.J., Lepore, A.N., Eastman, L.F.
Published in IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings (1987)
Published in IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings (1987)
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Conference Proceeding