Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor
Florovi, M, Ková, J, Ková, J, Chvála, A, Weis, M, Jacquet, J-C, Delage, S L
Published in Semiconductor science and technology (01.02.2021)
Published in Semiconductor science and technology (01.02.2021)
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Journal Article
Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT
Florovi, M, Szobolovszký, R, Ková, J, Ková, J, Chvála, A, Jacquet, J-C, Delage, S L
Published in Semiconductor science and technology (01.06.2019)
Published in Semiconductor science and technology (01.06.2019)
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Journal Article
AlGaN/GaN HEMT channel temperature determination utilizing external heater
Florovi, M, Szobolovszký, R, Ková, J, Ková, J, Chvála, A, Jacquet, J-C, Delage, S L
Published in Semiconductor science and technology (01.02.2020)
Published in Semiconductor science and technology (01.02.2020)
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Journal Article
Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors
Florovi, M, Stoklas, R, Ková, J, Kordoš, P
Published in Semiconductor science and technology (01.02.2017)
Published in Semiconductor science and technology (01.02.2017)
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Journal Article