Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective
Navas, Javier, Araujo, Daniel, Piñero, José Carlos, Sánchez-Coronilla, Antonio, Blanco, Eduardo, Villar, Pilar, Alcántara, Rodrigo, Montserrat, Josep, Florentin, Matthieu, Eon, David, Pernot, Julien
Published in Applied surface science (01.03.2018)
Published in Applied surface science (01.03.2018)
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Journal Article
Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
Florentin, Matthieu, Godignon, Philippe, Rebollo, Jose, Montserrat, Josep, Alexandru, Mihaela, Schmidt, Bernd, Millan, José, Cabello, Maria
Published in Materials Science Forum (01.05.2016)
Published in Materials Science Forum (01.05.2016)
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Journal Article
Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
Juillaguet, Sandrine, Konczewicz, Leszek, Contreras, Sylvie, Florentin, Matthieu, Soler, Victor, Montserrat, Josep, Rafi, Joan Marc, Chevalier, Florian, Godignon, Philippe
Published in Materials science forum (01.06.2015)
Published in Materials science forum (01.06.2015)
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Journal Article
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs
Florentin, Matthieu, Millan, Jose, Godignon, Philippe, Alexandru, Mihaela, Constant, Aurore, Schmidt, Bernd
Published in 2014 44th European Solid State Device Research Conference (ESSDERC) (01.09.2014)
Published in 2014 44th European Solid State Device Research Conference (ESSDERC) (01.09.2014)
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