Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
Simoen, E., Gaillardin, M., Paillet, P., Reed, R. A., Schrimpf, R. D., Alles, M. L., El-Mamouni, F., Fleetwood, D. M., Griffoni, A., Claeys, C.
Published in IEEE transactions on nuclear science (01.06.2013)
Published in IEEE transactions on nuclear science (01.06.2013)
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Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices
Geremew, A. K, Kargar, F, Zhang, E. X, Zhao, S. E, Aytan, E, Bloodgood, M. A, Salguero, T. T, Rumyantsev, S, Fedoseyev, A, Fleetwood, D. M, Balandin, A. A
Published in Nanoscale (25.04.2019)
Published in Nanoscale (25.04.2019)
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EP2 receptor antagonism reduces peripheral and central hyperalgesia in a preclinical mouse model of endometriosis
Greaves, Erin, Horne, Andrew W., Jerina, Helen, Mikolajczak, Marta, Hilferty, Lisa, Mitchell, Rory, Fleetwood-Walker, Sue M., Saunders, Philippa T. K.
Published in Scientific reports (10.03.2017)
Published in Scientific reports (10.03.2017)
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Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs
Puzyrev, Yevgeniy, Paccagnella, Alessandro, Pantelides, Sokrates T., Mukherjee, Shubhajit, Chen, Jin, Roy, Tania, Silvestri, Marco, Schrimpf, Ronald D., Fleetwood, Daniel M., Singh, Jasprit, Hinckley, John M.
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation
Rongmei Chen, Fengqi Zhang, Wei Chen, Lili Ding, Xiaoqiang Guo, Chen Shen, Yinhong Luo, Wen Zhao, Lisang Zheng, Hongxia Guo, Yinong Liu, Fleetwood, Daniel M.
Published in IEEE transactions on nuclear science (01.09.2017)
Published in IEEE transactions on nuclear science (01.09.2017)
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Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits
Chen, R. M., Diggins, Z. J., Mahatme, N. N., Wang, L., Zhang, E. X., Chen, Y. P., Zhang, H., Liu, Y. N., Narasimham, B., Witulski, A. F., Bhuva, B. L., Fleetwood, D. M.
Published in IEEE transactions on nuclear science (01.08.2017)
Published in IEEE transactions on nuclear science (01.08.2017)
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Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs
Xiao Sun, Saadat, Omair I., Jin Chen, Zhang, E. Xia, Cui, Sharon, Palacios, Tomas, Fleetwood, Dan M., Ma, T. P.
Published in IEEE transactions on nuclear science (01.12.2013)
Published in IEEE transactions on nuclear science (01.12.2013)
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Bias Dependence of Total-Dose Effects in Bulk FinFETs
Chatterjee, I., Zhang, E. X., Bhuva, B. L., Alles, M. A., Schrimpf, R. D., Fleetwood, D. M., Fang, Y.-P, Oates, A.
Published in IEEE transactions on nuclear science (01.12.2013)
Published in IEEE transactions on nuclear science (01.12.2013)
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Analgesia Mediated by the TRPM8 Cold Receptor in Chronic Neuropathic Pain
Proudfoot, Clare J., Garry, Emer M., Cottrell, David F., Rosie, Roberta, Anderson, Heather, Robertson, Darren C., Fleetwood-Walker, Susan M., Mitchell, Rory
Published in Current biology (22.08.2006)
Published in Current biology (22.08.2006)
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Charge Trapping in Al2O3/ \beta -Ga2O3-Based MOS Capacitors
Bhuiyan, Maruf A., Zhou, Hong, Jiang, Rong, Zhang, En Xia, Fleetwood, Daniel M., Ye, Peide D., Ma, Tso-Ping
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices
Cher Xuan Zhang, En Xia Zhang, Fleetwood, D. M., Schrimpf, R. D., Dhar, S., Sei-Hyung Ryu, Xiao Shen, Pantelides, S. T.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Special NSREC 2016 Issue of the IEEE Transactions on Nuclear Science Comments by the Editors
Fleetwood, Daniel M., Brown, Dennis, Girard, Sylvain, Gerardin, Simone, Quinn, Heather, Kobayashi, Daisuke, Esqueda, Ivan Sanchez, Robinson, William
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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