Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices
Khandelwal, S., Chauhan, Y. S., Fjeldly, T. A.
Published in IEEE transactions on electron devices (01.10.2012)
Published in IEEE transactions on electron devices (01.10.2012)
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Journal Article
A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices
Khandelwal, S., Goyal, N., Fjeldly, T. A.
Published in IEEE transactions on electron devices (01.10.2011)
Published in IEEE transactions on electron devices (01.10.2011)
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Journal Article
Assessment of NBTI in Presence of Self-Heating in High- k SOI FinFETs
Monga, U., Khandelwal, S., Aghassi, J., Sedlmeir, J., Fjeldly, T. A.
Published in IEEE electron device letters (01.11.2012)
Published in IEEE electron device letters (01.11.2012)
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Journal Article
Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
Khandelwal, Sourabh, Yadav, Chandan, Agnihotri, Shantanu, Chauhan, Yogesh Singh, Curutchet, Arnaud, Zimmer, Thomas, De Jaeger, Jean-Claude, Defrance, Nicolas, Fjeldly, Tor A.
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs
Iniguez, B., Fjeldly, T.A., Lazaro, A., Danneville, F., Deen, M.J.
Published in IEEE transactions on electron devices (01.09.2006)
Published in IEEE transactions on electron devices (01.09.2006)
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Journal Article
Precise Modeling Framework for Short-Channel Double-Gate and Gate-All-Around MOSFETs
Borli, H., Kolberg, S., Fjeldly, T.A., Iniguez, B.
Published in IEEE transactions on electron devices (01.10.2008)
Published in IEEE transactions on electron devices (01.10.2008)
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Journal Article
ASM GaN: Industry Standard Model for GaN RF and Power Devices-Part 1: DC, CV, and RF Model
Khandelwal, Sourabh, Chauhan, Yogesh Singh, Fjeldly, Tor A., Ghosh, Sudip, Pampori, Ahtisham, Mahajan, Dhawal, Dangi, Raghvendra, Ahsan, Sheikh Aamir
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Journal Article
Impact of Self-Heating in SOI FinFETs on Analog Circuits and Interdie Variability
Monga, U, Aghassi, J, Siprak, D, Sedlmeir, J, Hanke, C, Kubrak, V, Heinrich, R, Fjeldly, T A
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Capacitance modeling of short-channel double-gate MOSFETs
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Journal Article
Conference Proceeding
Conducting laboratory experiments over the Internet
Hong Shen, Zheng Xu, Dalager, B., Kristiansen, V., Strom, O., Shur, M.S., Fjeldly, T.A., Jian-Qiang Lu, Ytterdal, T.
Published in IEEE transactions on education (01.08.1999)
Published in IEEE transactions on education (01.08.1999)
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Journal Article
Influence of the fiber surface treatment and hot–wet environment on the mechanical behavior of carbon/epoxy composites
Fjeldly, A, Olsen, T, Rysjedal, J.H, Berg, J.E
Published in Composites. Part A, Applied science and manufacturing (01.01.2001)
Published in Composites. Part A, Applied science and manufacturing (01.01.2001)
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Journal Article
Conference Proceeding