IC with test structures and e-beam pads embedded within a contiguous standard cell area
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Moe, Matthew, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 31.08.2021
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Year of Publication 31.08.2021
Patent
IC with test structures and e-beam pads embedded within a contiguous standard cell area
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Moe, Matthew, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 03.08.2021
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Year of Publication 03.08.2021
Patent
IC with test structures and e-beam pads embedded within a contiguous standard cell area
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Moe, Matthew, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 03.08.2021
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Year of Publication 03.08.2021
Patent
IC with test structures and E-beam pads embedded within a contiguous standard cell area
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Moe, Matthew, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 27.07.2021
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Year of Publication 27.07.2021
Patent
IC with test structures and e-beam pads embedded within a contiguous standard cell area
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Moe, Matthew, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 25.05.2021
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Year of Publication 25.05.2021
Patent
IC with test structures and E-beam pads embedded within a contiguous standard cell area
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Moe, Matthew, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 13.04.2021
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Year of Publication 13.04.2021
Patent
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 01.12.2020
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Year of Publication 01.12.2020
Patent
IC with test structures embedded within a contiguous standard cell area
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 15.09.2020
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Year of Publication 15.09.2020
Patent
Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Year of Publication 17.03.2020
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Year of Publication 17.03.2020
Patent