Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System
Weimer, Christoph, Vardarli, Eren, Fischer, Gerhard G., Schroter, Michael
Published in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (19.06.2022)
Published in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (19.06.2022)
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Conference Proceeding
A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche Area in SiGe
Yaoming Sun, Fischer, G. G., Scheytt, J. C.
Published in IEEE transactions on microwave theory and techniques (01.08.2012)
Published in IEEE transactions on microwave theory and techniques (01.08.2012)
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Journal Article
Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology
Fox, Alexander, Heinemann, Bernd, Rucker, Holger, Barth, Rainer, Fischer, Gerhard G., Wipf, Christian, Marschmeyer, Steffen, Aufinger, Klaus, Bock, Josef, Boguth, Sabine, Knapp, Herbert, Lachner, Rudolf, Liebl, Wolfgang, Manger, Dirk, Meister, Thomas F., Pribil, Andreas, Wursthorn, Jonas
Published in IEEE electron device letters (01.07.2015)
Published in IEEE electron device letters (01.07.2015)
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Journal Article
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs
Weimer, Christoph, Jin, Xiaodi, Fischer, Gerhard G., Schroter, Michael
Published in 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.10.2022)
Published in 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.10.2022)
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Conference Proceeding
A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps
Rücker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndörfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji
Published in IEEE journal of solid-state circuits (01.09.2010)
Published in IEEE journal of solid-state circuits (01.09.2010)
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Journal Article
Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs
Kumar, Khamesh, Chakravorty, Anjan, Fischer, Gerhard G., Wipf, Christian
Published in IEEE transactions on electron devices (01.08.2015)
Published in IEEE transactions on electron devices (01.08.2015)
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Journal Article
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications
Weimer, Christoph, Fischer, Gerhard G., Schroter, Michael
Published in IEEE transactions on device and materials reliability (01.03.2024)
Published in IEEE transactions on device and materials reliability (01.03.2024)
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Magazine Article
A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps
Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji
Published in IEEE journal of solid-state circuits (01.09.2010)
Published in IEEE journal of solid-state circuits (01.09.2010)
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Journal Article
A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps
Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji
Published in IEEE journal of solid-state circuits (01.09.2010)
Published in IEEE journal of solid-state circuits (01.09.2010)
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Journal Article
A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting
RÜCKER, Holger, HEINEMANN, Bernd, KNOLL, Dieter, KORNDÖRFER, Falk, MAI, Andreas, MARSCHMEYER, Steffen, SCHLEY, P, SCHMIDT, D, SCHMIDT, J, ANDREAS SCHUBERT, Markus, SCHULZ, K, TILLACK, Bernd, WINKLER, Wolfgang, WOLANSKY, D, YAMAMOTO, Yuji, BARTH, R, BORNGRÄBER, J, DREWS, J, FISCHER, Gerhard G, FOX, Alexander, GRABOLLA, Thomas, HAAK, U
Published in IEEE journal of solid-state circuits (2010)
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Published in IEEE journal of solid-state circuits (2010)
Journal Article
Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation
Diestelhorst, R.M., Phillips, S.D., Appaswamy, A., Sutton, A.K., Cressler, J.D., Pellish, J.A., Reed, R.A., Vizkelethy, G., Marshall, P.W., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary (npn + pnp) SiGe:C HBT Technology
Diestelhorst, R.M., Finn, S., Bongim Jun, Sutton, A.K., Peng Cheng, Marshall, P.W., Cressler, J.D., Schrimpf, R.D., Fleetwood, D.M., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
A comparison of npn vs. pnp SiGe HBT oscillator phase noise performance in a complementary SiGe platform
Horst, S J, Chakraborty, P, Saha, P, Cressler, J D, Gustat, H, Heinemann, B, Fischer, G G, Knoll, D, Tillack, B
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
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Conference Proceeding