The effects of Sb/Te ratio on crystallization kinetics in Ge-rich GeSbTe phase-change materials
Daoudi, O., Nolot, E., Mazel, Y., Dupraz, M., Roussel, H., Fillot, F., Le, V.-H., Dartois, M., Tessaire, M., Renevier, H., Navarro, G.
Published in Journal of applied physics (21.10.2024)
Published in Journal of applied physics (21.10.2024)
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Journal Article
Thermal conductivity of carbon doped GeTe thin films in amorphous and crystalline state measured by modulated photo thermal radiometry
Kusiak, Andrzej, Battaglia, Jean-Luc, Noé, Pierre, Sousa, Véronique, Fillot, F.
Published in Journal of physics. Conference series (01.09.2016)
Published in Journal of physics. Conference series (01.09.2016)
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Journal Article
The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature
Prazakova, L., Nolot, E., Martinez, E., Rouchon, D., Fillot, F., Bernier, N., Elizalde, R., Bernard, M., Navarro, G.
Published in Materialia (01.03.2022)
Published in Materialia (01.03.2022)
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Journal Article
Transient thermal conductivity in PECVD SiN x at high temperature: The thermal signature of an on-going irreversible modification
Hadi, M., Pailhès, S., Debord, R., Benamrouche, A., Drouard, E., Gehin, T., Botella, C., Leclercq, J.-L., Noe, P., Fillot, F., Giordano, V.M.
Published in Materialia (01.12.2022)
Published in Materialia (01.12.2022)
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Journal Article
Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3
FILLOT, F, MOREL, T, MINORET, S, MATKO, I, MAITREJEAN, S, GUILLAUMOT, B, CHENEVIER, B, BILLON, T
Published in Microelectronic engineering (01.12.2005)
Published in Microelectronic engineering (01.12.2005)
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Conference Proceeding
Journal Article
Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS
Marseilhan, D., Barnes, J.P., Fillot, F., Hartmann, J.M., Holliger, P.
Published in Applied surface science (15.12.2008)
Published in Applied surface science (15.12.2008)
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Journal Article
Growth of RuO2 thin films by liquid injection atomic layer deposition
HUSEKOVA, K, DOBROCKA, E, ROSOVA, A, SOLTYS, J, SATKA, A, FILLOT, F, FRÖHLICH, K
Published in Thin solid films (01.06.2010)
Published in Thin solid films (01.06.2010)
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Conference Proceeding
Journal Article
Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering
Hartmann, J.M., Gonzatti, F., Fillot, F., Billon, T.
Published in Journal of crystal growth (04.01.2008)
Published in Journal of crystal growth (04.01.2008)
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Journal Article
GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion
Loubriat, S., Muyard, D., Fillot, F., Roule, A., Veillerot, M., Barnes, J.P., Gergaud, P., Vandroux, L., Verdier, M., Maitrejean, S.
Published in Microelectronic engineering (01.05.2011)
Published in Microelectronic engineering (01.05.2011)
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Journal Article
Conference Proceeding
Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe
HARTMANN, J. M, BOGUMILOWCIZ, Y, ABBADIE, A, FILLOT, F, BILLON, T
Published in Journal of crystal growth (01.05.2008)
Published in Journal of crystal growth (01.05.2008)
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Journal Article
Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget
Martinez, E., Leroux, C., Benedetto, N., Gaumer, C., Charbonnier, M., Licitra, C., Guedj, C., Fillot, F., Lhostis, S.
Published in Journal of the Electrochemical Society (2009)
Published in Journal of the Electrochemical Society (2009)
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Journal Article
Investigations of the interface stability in HfO2-metal electrodes
FILLOT, F, CHENEVIER, B, GUILLAUMOT, B, PASSEMARD, G, MAITREJEAN, S, AUDIER, M, CHAUDOUËT, P, BOCHU, B, SENATEUR, J. P, PISCH, A, MOURIER, T, MONCHOIX, H
Published in Microelectronic engineering (01.11.2003)
Published in Microelectronic engineering (01.11.2003)
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Conference Proceeding
Journal Article
Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs
Thevenod, L., Cassé, M., Mouis, M., Reimbold, G., Fillot, F., Guillaumot, B., Boulanger, F.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Journal Article
Conference Proceeding
Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate
Navarro, G., Sabbione, C., Meli, V., Nistor, L. E., Frei, M., Garrione, J., Tessaire, M., Fillot, F., Bernier, N., Nolot, E., Sklenard, B., Li, J., Martin, S., Castellani, N., Bourgeois, G., Cyrille, M. C., Andrieu, F.
Published in 2022 IEEE International Memory Workshop (IMW) (01.05.2022)
Published in 2022 IEEE International Memory Workshop (IMW) (01.05.2022)
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Conference Proceeding
Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory
Navarro, G., Coue, M., Kiouseloglou, A., Noe, P., Fillot, F., Delaye, V., Persico, A., Roule, A., Bernard, M., Sabbione, C., Blachier, D., Sousa, V., Perniola, L., Maitrejean, S., Cabrini, A., Torelli, G., Zuliani, P., Annunziata, R., Palumbo, E., Borghi, M., Reimbold, G., De Salvo, B.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory
Navarro, G., Sousa, V., Noe, P., Castellani, N., Coue, M., Kluge, J., Kiouseloglou, A., Sabbione, C., Persico, A., Roule, A., Cueto, O., Blonkowski, S., Fillot, F., Bernier, N., Annunziata, R., Borghi, M., Palumbo, E., Zuliani, P., Perniola, L.
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
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Conference Proceeding
N-doped GeTe as performance booster for embedded Phase-Change Memories
Fantini, A, Sousa, V, Perniola, L, Gourvest, E, Bastien, J C, Maitrejean, S, Braga, S, Pashkov, N, Bastard, A, Hyot, B, Roule, A, Persico, A, Feldis, H, Jahan, C, Nodin, J F, Blachier, D, Toffoli, A, Reimbold, G, Fillot, F, Pierre, F, Annunziata, R, Benshael, D, Mazoyer, P, Vallée, C, Billon, T, Hazart, J, De Salvo, B, Boulanger, F
Published in 2010 International Electron Devices Meeting (01.01.2010)
Published in 2010 International Electron Devices Meeting (01.01.2010)
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Conference Proceeding
Transient thermal conductivity in PECVD SiNx at high temperature: The thermal signature of an on-going irreversible modification
Hadi, M., Pailhès, S., Debord, R., Benamrouche, A., Drouard, E., Gehin, T., Botella, C., Leclercq, J.-L., Noe, P., Fillot, F., Giordano, V.M.
Published in Materialia (01.12.2022)
Published in Materialia (01.12.2022)
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Journal Article