N-polar GaN epitaxy and high electron mobility transistors
Wong, Man Hoi, Keller, Stacia, Dasgupta, Nidhi, Sansaptak, Denninghoff, Daniel J, Kolluri, Seshadri, Brown, David F, Lu, Jing, Fichtenbaum, Nicholas A, Ahmadi, Elaheh, Singisetti, Uttam, Chini, Alessandro, Rajan, Siddharth, DenBaars, Steven P, Speck, James S, Mishra, Umesh K
Published in Semiconductor science and technology (01.07.2013)
Published in Semiconductor science and technology (01.07.2013)
Get full text
Journal Article
Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Keller, Stacia, Li, Haoran, Laurent, Matthew, Hu, Yanling, Pfaff, Nathan, Lu, Jing, Brown, David F, Fichtenbaum, Nicholas A, Speck, James S, DenBaars, Steven P, Mishra, Umesh K
Published in Semiconductor science and technology (01.11.2014)
Published in Semiconductor science and technology (01.11.2014)
Get full text
Journal Article
Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
Keller, Stacia, Li, Haoran, Laurent, Matthew, Hu, Yanling, Pfaff, Nathan, Lu, Jing, Brown, David F, Fichtenbaum, Nicholas A, Speck, James S, DenBaars, Steven P, Mishra, Umesh K
Published in Semiconductor science and technology (01.11.2014)
Published in Semiconductor science and technology (01.11.2014)
Get full text
Journal Article
Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
Fichtenbaum, Nicholas A., Neufeld, Carl J., Schaake, Chris, Wu, Yuan, Wong, Man Hoi, Grundmann, Michael, Keller, Stacia, DenBaars, Steven P., Speck, James S., Mishra, Umesh K.
Published in Japanese Journal of Applied Physics (01.03.2007)
Published in Japanese Journal of Applied Physics (01.03.2007)
Get full text
Journal Article
M -plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c -plane patterned templates
Schaake, Christopher A., Fichtenbaum, Nicholas A., Neufeld, Carl J., Keller, Stacia, DenBaars, Steven P., Speck, James S., Mishra, Umesh K.
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
Get full text
Journal Article
Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
Pei, Yi, Chu, Rongming, Fichtenbaum, Nicholas A., Chen, Zhen, Brown, David, Shen, Likun, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.
Published in Japanese Journal of Applied Physics (01.12.2007)
Published in Japanese Journal of Applied Physics (01.12.2007)
Get full text
Journal Article
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
Masui, Hisashi, Keller, Stacia, Fellows, Natalie, Fichtenbaum, Nicholas A., Furukawa, Motoko, Nakamura, Shuji, Mishra, Umesh K., DenBaars, Steven P.
Published in Japanese Journal of Applied Physics (01.07.2009)
Published in Japanese Journal of Applied Physics (01.07.2009)
Get full text
Journal Article
N-polar GaN epitaxy and high electron mobility transistors: Gallium nitride electronics
MAN HOI WONG, KELLER, Stacia, CHINI, Alessandro, RAJAN, Siddharth, DENBAARS, Steven P, SPECK, James S, MISHRA, Umesh K, DASGUPTA, Sansaptak, DENNINGHOFF, Daniel J, KOLLURI, Seshadri, BROWN, David F, JING LU, FICHTENBAUM, Nicholas A, AHMADI, Elaheh, SINGISETTI, Uttam
Published in Semiconductor science and technology (2013)
Get full text
Published in Semiconductor science and technology (2013)
Journal Article
Study of the n + GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
Pei, Yi, Shen, Likun, Palacios, Tomas, Fichtenbaum, Nicholas A., Mccarthy, Lee S., Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.
Published in Japanese Journal of Applied Physics (01.09.2007)
Published in Japanese Journal of Applied Physics (01.09.2007)
Get full text
Journal Article