Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
Claudel, A., Fellmann, V., Gélard, I., Coudurier, N., Sauvage, D., Balaji, M., Blanquet, E., Boichot, R., Beutier, G., Coindeau, S., Pierret, A., Attal-Trétout, B., Luca, S., Crisci, A., Baskar, K., Pons, M.
Published in Thin solid films (01.12.2014)
Published in Thin solid films (01.12.2014)
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Journal Article
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, R., Pierret, A., Attal-Trétout, B., Crisci, A., Coindeau, S., Roussel, H., Pique, D., Baskar, K., Pons, M.
Published in Journal of alloys and compounds (15.06.2012)
Published in Journal of alloys and compounds (15.06.2012)
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Journal Article
Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures
Redondo-Cubero, A, Lorenz, K, Wendler, E, Carvalho, D, Ben, T, Morales, F M, García, R, Fellmann, V, Daudin, B
Published in Nanotechnology (20.12.2013)
Published in Nanotechnology (20.12.2013)
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Journal Article
GaN:Pr3+ nanostructures for red solid state light emission
Rodrigues, J, Ben Sedrine, N, Felizardo, M, Soares, M. J, Alves, E, Neves, A. J, Fellmann, V, Tourbot, G, Auzelle, T, Daudin, B, Bo kowski, M, Lorenz, K, Monteiro, T
Year of Publication 20.11.2014
Year of Publication 20.11.2014
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Journal Article
Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
Coudurier, N., Boichot, R., Fellmann, V., Claudel, A., Blanquet, E., Crisci, A., Coindeau, S., Pique, D., Pons, M.
Published in Physica status solidi. C (01.03.2013)
Published in Physica status solidi. C (01.03.2013)
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Journal Article
Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X-ray study of low-dimensional structures
Magalhães, S., Lorenz, K., Franco, N., Barradas, N. P., Alves, E., Monteiro, T., Amstatt, B., Fellmann, V., Daudin, B.
Published in Surface and interface analysis (01.10.2010)
Published in Surface and interface analysis (01.10.2010)
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Journal Article
The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD
Peres, M., Magalhães, S., Rodrigues, J., Soares, M.J., Fellmann, V., Neves, A.J., Alves, E., Daudin, B., Lorenz, K., Monteiro, T.
Published in Optical materials (01.05.2011)
Published in Optical materials (01.05.2011)
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Journal Article
Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy
Landré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Daudin, B.
Published in Physica status solidi. C (01.07.2010)
Published in Physica status solidi. C (01.07.2010)
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Journal Article
Selective ion-induced intermixing and damage in low-dimensional GaN/AIN quantum structures
REDONDO-CUBERO, A, LORENZ, K, WENDLER, E, CARVALHO, D, BEN, T, MORALES, F. M, GARCIA, R, FELLMANN, V, DAUDIN, B
Published in Nanotechnology (2013)
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Published in Nanotechnology (2013)
Journal Article
GaN:Pr 3+ nanostructures for red solid state light emission
Rodrigues, J., Ben Sedrine, N., Felizardo, M., Soares, M. J., Alves, E., Neves, A. J., Fellmann, V., Tourbot, G., Auzelle, T., Daudin, B., Boćkowski, M., Lorenz, K., Monteiro, T.
Published in RSC advances (2014)
Published in RSC advances (2014)
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Journal Article
Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots: Influence of thermal annealing on the properties of GaN/AlN quantum dots
Peres, M., Neves, A. J., Monteiro, T., Magalhães, S., Alves, E., Lorenz, K., Okuno-Vila, H., Fellmann, V., Bougerol, C., Daudin, B.
Published in physica status solidi (b) (01.07.2010)
Published in physica status solidi (b) (01.07.2010)
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Journal Article
Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
Peres, M., Neves, A. J., Monteiro, T., Magalhães, S., Alves, E., Lorenz, K., Okuno-Vila, H., Fellmann, V., Bougerol, C., Daudin, B.
Published in Physica status solidi. B. Basic research (01.07.2010)
Published in Physica status solidi. B. Basic research (01.07.2010)
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Journal Article
Conference Proceeding
GaN:Pr super(3+) nanostructures for red solid state light emission
Rodrigues, J, Ben Sedrine, N, Felizardo, M, Soares, MJ, Alves, E, Neves, A J, Fellmann, V, Tourbot, G, Auzelle, T, Daudin, B, Bockowski, M, Lorenz, K, Monteiro, T
Published in RSC advances (01.11.2014)
Published in RSC advances (01.11.2014)
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Journal Article
Significance of initial stages on the epitaxial growth of AlN using high temperature halide chemical vapor deposition
Balaji, Manavaimaran, Claudel, Arnaud, Fellmann, Vincent, Gélard, Isabelle, Blanquet, Elisabeth, Boichot, Raphaël, Coindeau, Stéphane, Roussel, Hervé, Pique, Didier, Baskar, Krishnan, Pons, Michel
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
Effect of annealing on AIN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures
MAGALHAES, S, LORENZ, K, FRANCO, N, BARRADAS, N. P, ALVES, E, MONTEIRO, T, AMSTATT, B, FELLMANN, V, DAUDIN, B
Published in Surface and interface analysis (2010)
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Published in Surface and interface analysis (2010)
Conference Proceeding