Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films
Suh, J. Y., Lopez, R., Feldman, L. C., Haglund, R. F.
Published in Journal of applied physics (15.07.2004)
Published in Journal of applied physics (15.07.2004)
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Journal Article
Modified Deal Grove model for the thermal oxidation of silicon carbide
Song, Y., Dhar, S., Feldman, L. C., Chung, G., Williams, J. R.
Published in Journal of applied physics (01.05.2004)
Published in Journal of applied physics (01.05.2004)
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Journal Article
Probing Phonon and Infrared-Plasmons in Nanoscale Interfaces
Lagos, MJ, Hohenester, U, Trugler, A, Amarasinghe, V, Feldman, LC, Batson, PE, Botton, GA
Published in Microscopy and microanalysis (01.08.2019)
Published in Microscopy and microanalysis (01.08.2019)
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Journal Article
Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance
Rini, Matteo, Cavalleri, Andrea, Schoenlein, Robert W, López, René, Feldman, Leonard C, Haglund, Jr, Richard F, Boatner, Lynn A, Haynes, Tony E
Published in Optics letters (01.03.2005)
Published in Optics letters (01.03.2005)
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Journal Article
Rapid tarnishing of silver nanoparticles in ambient laboratory air
MCMAHON, M. D, LOPEZ, R, MEYER, H. M, FELDMAN, L. C, HAGLUND, R. F
Published in Applied physics. B, Lasers and optics (01.06.2005)
Published in Applied physics. B, Lasers and optics (01.06.2005)
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Journal Article
Dynamic scaling, island size distribution, and morphology in the aggregation regime of submonolayer pentacene films
Ruiz, Ricardo, Nickel, Bert, Koch, Norbert, Feldman, Leonard C, Haglund, Jr, Richard F, Kahn, Antoine, Family, Fereydoon, Scoles, Giacinto
Published in Physical review letters (26.09.2003)
Published in Physical review letters (26.09.2003)
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Journal Article
Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix
Lopez, R., Boatner, L. A., Haynes, T. E., Feldman, L. C., Haglund, R. F.
Published in Journal of applied physics (01.10.2002)
Published in Journal of applied physics (01.10.2002)
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Journal Article
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Chanana, R.K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Holland, O.W., Das, M.K., Palmour, J.W.
Published in IEEE electron device letters (01.04.2001)
Published in IEEE electron device letters (01.04.2001)
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Journal Article
Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces
Modic, A., Sharma, Y.K., Xu, Y., Liu, G., Ahyi, A.C., Williams, J.R., Feldman, L.C., Dhar, S.
Published in Journal of electronic materials (01.04.2014)
Published in Journal of electronic materials (01.04.2014)
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Journal Article
Conference Proceeding
Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC
Dhar, S., Feldman, L. C., Wang, S., Isaacs-Smith, T., Williams, J. R.
Published in Journal of applied physics (01.07.2005)
Published in Journal of applied physics (01.07.2005)
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Journal Article
Transition structure at the Si(100)-SiO2 interface
Bongiorno, Angelo, Pasquarello, Alfredo, Hybertsen, Mark S, Feldman, L C
Published in Physical review letters (09.05.2003)
Published in Physical review letters (09.05.2003)
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Journal Article
Interface Passivation for Silicon Dioxide Layers on Silicon Carbide
Dhar, Sarit, Wang, Shurui, Williams, John R., Pantelides, Sokrates T., Feldman, Leonard C.
Published in MRS bulletin (01.04.2005)
Published in MRS bulletin (01.04.2005)
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Journal Article
Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC
McDonald, K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Chung, G. Y., Tin, C. C., Williams, J. R.
Published in Journal of applied physics (01.03.2003)
Published in Journal of applied physics (01.03.2003)
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Journal Article
High-resolution elemental profiles of the silicon dioxide∕4H-silicon carbide interface
Chang, K.-C., Cao, Y., Porter, L. M., Bentley, J., Dhar, S., Feldman, L. C., Williams, J. R.
Published in Journal of applied physics (15.05.2005)
Published in Journal of applied physics (15.05.2005)
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Journal Article
Nitridation anisotropy in SiO2∕4H–SiC
Dhar, S., Feldman, L. C., Chang, K.-C., Cao, Y., Porter, L. M., Bentley, J., Williams, J. R.
Published in Journal of applied physics (01.04.2005)
Published in Journal of applied physics (01.04.2005)
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Journal Article
Equilibrium shape of Si
Eaglesham, DJ, White, AE, Feldman, LC, Moriya, N, Jacobson, DC
Published in Physical review letters (15.03.1993)
Published in Physical review letters (15.03.1993)
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Journal Article