Wafer-scale GaN HEMT performance enhancement by diamond substrate integration
Via, G. D., Felbinger, J. G., Blevins, J., Chabak, K., Jessen, G., Gillespie, J., Fitch, R., Crespo, A., Sutherlin, K., Poling, B., Tetlak, S., Gilbert, R., Cooper, T., Baranyai, R., Pomeroy, J. W., Kuball, M., Maurer, J. J., Bar-Cohen, A.
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
DIDUCK, Q, FELBINGER, J, EASTMAN, L. F, FRANCIS, D, WASSERBAUER, J, FAILI, F, BABIC, D. I, EJECKAM, F
Published in Electronics letters (2009)
Published in Electronics letters (2009)
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Journal Article
Headache in the elderly
Reinisch, V M, Schankin, C J, Felbinger, J, Sostak, P, Straube, A
Published in Schmerz (Berlin, Germany) (01.02.2008)
Published in Schmerz (Berlin, Germany) (01.02.2008)
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Journal Article
Comparison of GaN HEMTs on Diamond and SiC Substrates
Felbinger, J.G., Chandra, M.V.S., Yunju Sun, Eastman, L.F., Wasserbauer, J., Faili, F., Babic, D., Francis, D., Ejeckam, F.
Published in IEEE electron device letters (01.11.2007)
Published in IEEE electron device letters (01.11.2007)
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Journal Article
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
Diduck, Q, Felbinger, J, Eastman, L F, Francis, D, Wasserbauer, J, Faili, F, Babic, D I, Ejeckam, F
Published in Electronics letters (02.07.2009)
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Published in Electronics letters (02.07.2009)
Journal Article
An X-Band Low Phase Noise AlGaN-GaN-HEMT MMIC Push-Push Oscillator
Zirath, H., Szhau, L., Kuylenstierna, D., Felbinger, J., Andersson, K., Rorsman, N.
Published in 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2011)
Published in 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2011)
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Conference Proceeding
Kopfschmerzen im Alter
Reinisch, V.M., Schankin, C.J., Felbinger, J., Sostak, P., Straube, A.
Published in Schmerz (Berlin, Germany) (01.02.2008)
Published in Schmerz (Berlin, Germany) (01.02.2008)
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Journal Article
Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
Chehrenegar, P, Axelsson, O, Grahn, J, Rorsman, N, Felbinger, J G, Andersson, K
Published in 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (01.04.2011)
Published in 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (01.04.2011)
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Conference Proceeding
GaN-on-diamond field-effect transistors: from wafers to amplifier modules
Babić, D I, Diduck, Q, Yenigalla, P, Schreiber, A, Francis, D, Faili, F, Ejeckam, F, Felbinger, J G, Eastman, L F
Published in The 33rd International Convention MIPRO (01.05.2010)
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Published in The 33rd International Convention MIPRO (01.05.2010)
Conference Proceeding