Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS
Joseph, A.J., Dunn, J., Nowak, E., Harame, D.L., Jagannathan, B., Coolbaugh, D., Ahlgren, D., Magerlein, J., Lanzerotti, L., Feilchenfeld, N., St Onge, S.
Published in Proceedings of the IEEE (2005)
Published in Proceedings of the IEEE (2005)
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Journal Article
A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration
Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
Latchup in merged triple well structure
Voldman, S., Gebreselasie, E., Zierak, M., Hershberger, D., Collins, D., Feilchenfeld, N., St Onge, S., Dunn, J.
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
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Conference Proceeding
The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness
Voldman, S., Gebreselasie, E., Lanzerotti, L., Larsen, T., Feilchenfeld, N., St Onge, S., Joseph, A., Dunn, J.
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
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Conference Proceeding
An integrated silicon photonics technology for O-band datacom
Feilchenfeld, N. B., Anderson, F. G., Barwicz, T., Chilstedt, S., Ding, Y., Ellis-Monaghan, J., Gill, D. M., Hedges, C., Hofrichter, J., Horst, F., Khater, M., Kiewra, E., Leidy, R., Martin, Y., McLean, K., Nicewicz, M., Orcutt, J. S., Porth, B., Proesel, J., Reinholm, C., Rosenberg, J. C., Sacher, W. D., Stricker, A. D., Whiting, C., Xiong, C., Agrawal, A., Baker, F., Baks, C. W., Cucci, B., Dang, D., Doan, T., Doany, F., Engelmann, S., Gordon, M., Joseph, E., Maling, J., Shank, S., Tian, X., Willets, C., Ferrario, J., Meghelli, M., Libsch, F., Offrein, B., Green, W. M. J., Haensch, W.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology
Jong Mun Park, Knaipp, M., Enichlmair, H., Minixhofer, R., Yun Shi, Feilchenfeld, N.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
Foundation of rf CMOS and SiGe BiCMOS technologies
Dunn, James S, Ahlgren, David C, Coolbaugh, Douglas D, Feilchenfeld, Natalie B
Published in IBM journal of research and development (01.03.2003)
Published in IBM journal of research and development (01.03.2003)
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Journal Article
Planar dual gate oxide LDMOS structures in 180nm power management technology
Sharma, S., Letavic, T., Yun Shi, Loiseau, A., Monaghan, J.-E, Feilchenfeld, N., Phelps, R., Lamothe, C., Cook, D., Dunn, J., Roerher, G., Nauschnig, H., Minixhofer, R.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
Drift design impact on quasi-saturation & HCI for scalable N-LDMOS
Yun Shi, Feilchenfeld, N., Phelps, R., Levy, M., Knaipp, M., Minixhofer, R.
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
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Conference Proceeding
A 90 to 170V scalable P-LDMOS with accompanied high voltage PJFET
Ellis-Monaghan, J., Yun Shi, Sharma, S., Feilchenfeld, N., Letavic, T., Phelps, R., Hedges, C., Cook, D., Dunn, J.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
Photoinitiated chain decomposition of phenyl isocyanate via its reaction with phenylnitrene
Waddell, Walter H, Feilchenfeld, Natalie B
Published in Journal of the American Chemical Society (01.08.1983)
Published in Journal of the American Chemical Society (01.08.1983)
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Journal Article
High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies
He, Z.X., Daley, D., Bolam, R., Vanslette, D., Chen, F., Cooney, E., Mosher, D., Feilchenfeld, N., Newton, K., Eshun, E., Rassel, R., Benoit, J., Coolbaugh, D., St. Onge, S., Dunn, J.
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
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Conference Proceeding
Monolithic silicon photonics at 25 Gb/s
Orcutt, J. S., Gill, D. M., Proesel, J., Ellis-Monaghan, J., Horst, F., Barwicz, T., Xiong, C., Anderson, F. G., Agrawal, A., Martin, Y., Baks, C. W., Khater, M., Rosenberg, J. C., Sacher, W. D., Hofrichter, J., Kiewra, E., Stricker, A. D., Libsch, F., Offrein, B., Meghelli, M., Feilchenfeld, N. B., Haensch, W., Green, W. M. J.
Published in 2016 Optical Fiber Communications Conference and Exhibition (OFC) (01.03.2016)
Published in 2016 Optical Fiber Communications Conference and Exhibition (OFC) (01.03.2016)
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Conference Proceeding
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT
Candra, P., Dahlstrom, M., Zierak, M., Voegeli, B., Watson, K., Gray, P., He, Z.X., Rassel, R.M., Von Bruns, S., Schmidt, N., Camillo-Castillo, R., Previty-Kelly, R., Gautsch, M., Norris, A., Gordon, M., Chapman, P., Hershberger, D., Lukaitis, J., Feilchenfeld, N., Joseph, A., St. Onge, S.A., Dunn, J.
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
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Conference Proceeding
Monolithic Silicon Photonic WDM Transceivers
Rosenberg, J. C., Horst, F., Khater, M., Anderson, F. G., Leidy, R., Barwicz, T., Gill, D., Kiewra, E., Martin, Y., Orcutt, J. S., Stricker, A. D., Whiting, C., McLean, K., Porth, B., Xiong, C., Feilchenfeld, N., Giewont, K., Nummy, K., Offrein, B. J., Haensch, W., Green, W. M. J.
Published in 2017 European Conference on Optical Communication (ECOC) (01.09.2017)
Published in 2017 European Conference on Optical Communication (ECOC) (01.09.2017)
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Conference Proceeding
Foundation of rf CMOS and SiGe BiCMOS technology technologies
Dunn, J S, Ahlgren, D C, Coolbaugh, D D, Feilchenfeld, N B, Freeman, G, Greenberg, D R, Groves, R A, Guarin, F J, Hammad, Y, Joseph, A J, Lanzerotti, L D, St Onge, S A, Orner, B A, Rieh, J-S, Stein, K J, Voldman, S H, Wang, P-C, Zierak, M J, Subbanna, S
Published in IBM journal of research and development (01.03.2003)
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Published in IBM journal of research and development (01.03.2003)
Journal Article
SiGe BiCMOS Trends - Today and Tomorrow
Dunn, J., Harame, D.L., Joseph, A.J., St Onge, S.A., Feilchenfeld, N.B., Lanzerotti, L., Orner, B., Gebreselasie, E., Johnson, J.B., Coolbaugh, D.D., Rassel, R., Khater, M.
Published in IEEE Custom Integrated Circuits Conference 2006 (01.09.2006)
Published in IEEE Custom Integrated Circuits Conference 2006 (01.09.2006)
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Conference Proceeding
Thermal decomposition and cobalt-carbon bond dissociation energies of organocobalamins: neopentyl-, (cyclopentylmethyl)-, (cyclohexylmethyl)-, (tetrahydrofurfuryl)- and ((tetrahydro-2H-pyryl)methyl)cobalamin
Kim, Sook Hui, Chen, Hui Lan, Feilchenfeld, Natalie, Halpern, Jack
Published in Journal of the American Chemical Society (01.05.1988)
Published in Journal of the American Chemical Society (01.05.1988)
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Journal Article