Nanopatterning with UV Optical Lithography
Rothschild, M., Bloomstein, T. M., Efremow, N., Fedynyshyn, T. H., Fritze, M., Pottebaum, I., Switkes, M.
Published in MRS bulletin (01.12.2005)
Published in MRS bulletin (01.12.2005)
Get full text
Journal Article
Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance
Wade, T., Geis, M.W., Fedynyshyn, T.H., Vitale, S.A., Varghese, J.O., Lennon, D.M., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.
Published in Diamond and related materials (01.06.2017)
Published in Diamond and related materials (01.06.2017)
Get full text
Journal Article
Review of technology for 157-nm lithography
Bates, A K, Rothschild, M, Bloomstein, T M, Fedynyshyn, T H
Published in IBM journal of research and development (01.09.2001)
Published in IBM journal of research and development (01.09.2001)
Get full text
Journal Article
A simple micromachining approach to testing nanoscale metal–self-assembled monolayer–metal junctions
Wynn, C M, Fedynyshyn, T H, Geis, M W, Kunz, R R, Lyszczarz, T M, Rothschild, M, Spector, S J, Switkes, M
Published in Nanotechnology (01.01.2004)
Published in Nanotechnology (01.01.2004)
Get full text
Journal Article
DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing
Bruenger, W.H., Buschbeck, H., Cekan, E., Eder, S., Fedynyshyn, T.H., Hertlein, W.G., Hudek, P., Kostic, I., Loeschner, H., Rangelow, I.W., Torkler, M.
Published in Microelectronic engineering (01.03.1998)
Published in Microelectronic engineering (01.03.1998)
Get full text
Journal Article
Conference Proceeding
Chemical and semiconducting properties of NO2-activated H-terminated diamond
Geis, M.W., Fedynyshyn, T.H., Plaut, M.E., Wade, T.C., Wuorio, C.H., Vitale, S.A., Varghese, J.O., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.
Published in Diamond and related materials (01.04.2018)
Published in Diamond and related materials (01.04.2018)
Get full text
Journal Article
Fluorine—an enabler in advanced photolithography
Rothschild, M., Bloomstein, T.M., Fedynyshyn, T.H., Liberman, V., Mowers, W., Sinta, R., Switkes, M., Grenville, A., Orvek, K.
Published in Journal of fluorine chemistry (01.07.2003)
Published in Journal of fluorine chemistry (01.07.2003)
Get full text
Journal Article
Chemical and semiconducting properties of NO^sub 2^-activated H-terminated diamond
Geis, MW, Fedynyshyn, TH, Plauta, ME, Wade, TC, Wuorio, CH, Vitale, SA, Varghese, JO, Grotjohn, TA, Nemanich, RJ, Hollis, MA
Published in Diamond and related materials (01.04.2018)
Get full text
Published in Diamond and related materials (01.04.2018)
Journal Article
The effect of metal masks on the plasma etch rate of silicon
FEDYNYSHYN, T. H, GRYNKEWICH, G. W, CHEN, B. A, MA, T. P
Published in Journal of the Electrochemical Society (01.06.1989)
Published in Journal of the Electrochemical Society (01.06.1989)
Get full text
Journal Article
Sub-0.5 micron lithography with i-line acid-hardened negative resists
Allen, M.T., Calabrese, G.S., Fedynyshyn, T.H., Lamola, A.A., Small, R.D.
Published in Microelectronic engineering (01.03.1992)
Published in Microelectronic engineering (01.03.1992)
Get full text
Journal Article
Encapsulation of Nanosized Silica by in Situ Polymerization of tert-Butyl Acrylate Monomer
Sondi, Ivan, Fedynyshyn, Theodore H, Sinta, Roger, Matijević, Egon
Published in Langmuir (14.11.2000)
Published in Langmuir (14.11.2000)
Get full text
Journal Article
Mask dependent etch rates. II: The effect of aluminium vs. photoresist masking on the etch rates of silicon and silicon dioxide in fluorine containing plasmas
FEDYNYSHYN, T. H, GRYNKEWICH, G. W, TSO-PING MA
Published in Journal of the Electrochemical Society (01.10.1987)
Published in Journal of the Electrochemical Society (01.10.1987)
Get full text
Journal Article