Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
Cao, Lina, Wang, Jingshan, Harden, Galen, Ye, Hansheng, Stillwell, Roy, Hoffman, Anthony J., Fay, Patrick
Published in Applied physics letters (25.06.2018)
Published in Applied physics letters (25.06.2018)
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Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN
Cao, Lina, Zhu, Zhongtao, Harden, Galen, Ye, Hansheng, Wang, Jingshan, Hoffman, Anthony, Fay, Patrick J.
Published in IEEE transactions on electron devices (01.03.2021)
Published in IEEE transactions on electron devices (01.03.2021)
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Tunable and reconfigurable bandstop filters enabled by optically controlled switching elements
Li, Peizhao, Shi, Yu, Deng, Yijing, Fay, Patrick, Liu, Lei
Published in Electronics letters (01.12.2022)
Published in Electronics letters (01.12.2022)
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Journal Article
Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures
Simon, John, Zhang, Ze, Goodman, Kevin, Xing, Huili, Kosel, Thomas, Fay, Patrick, Jena, Debdeep
Published in Physical review letters (10.07.2009)
Published in Physical review letters (10.07.2009)
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Wirelessly Powered Visible Light-Emitting Implant for Surgical Guidance during Lumpectomy
Rho, Sunghoon, Stillwell, Roy A., Yan, Kedi, de Almeida Barreto, Ana Flavia Borges, Smith, Joshua R., Fay, Patrick, Police, Alice M., O’Sullivan, Thomas D.
Published in Sensors (Basel, Switzerland) (30.08.2024)
Published in Sensors (Basel, Switzerland) (30.08.2024)
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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE
Ciarkowski, Timothy, Allen, Noah, Carlson, Eric, McCarthy, Robert, Youtsey, Chris, Wang, Jingshan, Fay, Patrick, Xie, Jinqiao, Guido, Louis
Published in Materials (01.08.2019)
Published in Materials (01.08.2019)
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Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
Youtsey, Chris, McCarthy, Robert, Reddy, Rekha, Forghani, Kamran, Xie, Andy, Beam, Ed, Wang, Jingshan, Fay, Patrick, Ciarkowski, Timothy, Carlson, Eric, Guido, Louis
Published in Physica Status Solidi B. Basic Solid State Physics (01.08.2017)
Published in Physica Status Solidi B. Basic Solid State Physics (01.08.2017)
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Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices
Lund, Cory, Romanczyk, Brian, Catalano, Massimo, Wang, Qingxiao, Li, Wenjun, DiGiovanni, Domenic, Kim, Moon J., Fay, Patrick, Nakamura, Shuji, DenBaars, Steven P., Mishra, Umesh K., Keller, Stacia
Published in Journal of applied physics (14.05.2017)
Published in Journal of applied physics (14.05.2017)
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Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS
Chakraborty, Wriddhi, Aabrar, Khandker Akif, Gomez, Jorge, Saligram, Rakshith, Raychowdhury, Arijit, Fay, Patrick, Datta, Suman
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2021)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2021)
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Polarization-engineering in group III-nitride heterostructures: New opportunities for device design
Jena, Debdeep, Simon, John, Wang, Albert (Kejia), Cao, Yu, Goodman, Kevin, Verma, Jai, Ganguly, Satyaki, Li, Guowang, Karda, Kamal, Protasenko, Vladimir, Lian, Chuanxin, Kosel, Thomas, Fay, Patrick, Xing, Huili
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
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Journal Article
Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors
Li, Wenjun, Jena, Debdeep, Fay, Patrick, Sharmin, Saima, Ilatikhameneh, Hesameddin, Rahman, Rajib, Lu, Yeqing, Wang, Jingshan, Yan, Xiaodong, Seabaugh, Alan, Klimeck, Gerhard
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2015)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2015)
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Journal Article
Molybdenum Carbamate Nanosheets as a New Class of Potential Phase Change Materials
Zhukovskyi, Maksym, Plashnitsa, Vladimir, Petchsang, Nattasamon, Ruth, Anthony, Bajpai, Anshumaan, Vietmeyer, Felix, Wang, Yuanxing, Brennan, Michael, Pang, Yunsong, Werellapatha, Kalpani, Bunker, Bruce, Chattopadhyay, Soma, Luo, Tengfei, Janko, Boldizsar, Fay, Patrick, Kuno, Masaru
Published in Nano letters (14.06.2017)
Published in Nano letters (14.06.2017)
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Journal Article
Tunnel FET Analog Benchmarking and Circuit Design
Lu, Hao, Paletti, Paolo, Li, Wenjun, Fay, Patrick, Ytterdal, Trond, Seabaugh, Alan
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2018)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2018)
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