Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure
Müller, M. R., Salazar, R., Fathipour, S., Xu, H., Kallis, K., Künzelmann, U., Seabaugh, A., Appenzeller, J., Knoch, J.
Published in Nanoscale research letters (22.11.2016)
Published in Nanoscale research letters (22.11.2016)
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Journal Article
Device simulation of a novel strained silicon channel RF LDMOS
Fathipour, V., Fathipour, S., Fathipour, M., Malakootian, M.A.
Published in Microelectronic engineering (01.06.2012)
Published in Microelectronic engineering (01.06.2012)
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Journal Article
Gate-Controlled WSe sub(2) Transistors Using a Buried Triple-Gate Structure
Mueller, M R, Salazar, R, Fathipour, S, Xu, H, Kallis, K, Kuenzelmann, U, Seabaugh, A, Appenzeller, J, Knoch, J
Published in Nanoscale research letters (01.12.2016)
Published in Nanoscale research letters (01.12.2016)
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Journal Article
Gate-Controlled WSe 2 Transistors Using a Buried Triple-Gate Structure
Müller, M R, Salazar, R, Fathipour, S, Xu, H, Kallis, K, Künzelmann, U, Seabaugh, A, Appenzeller, J, Knoch, J
Published in Nanoscale research letters (01.12.2016)
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Published in Nanoscale research letters (01.12.2016)
Journal Article
Gate-Controlled WSe^sub 2^ Transistors Using a Buried Triple-Gate Structure
Müller, M R, Salazar, R, Fathipour, S, Xu, H, Kallis, K, Künzelmann, U, Seabaugh, A, Appenzeller, J, Knoch, J
Published in Nanoscale research letters (01.11.2016)
Published in Nanoscale research letters (01.11.2016)
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Journal Article
Multiwall nanotubes of molybdenum disulfide as optical resonators
Kazanov, D. R, Poshakinskiy, A. V, Davydov, V. Yu, Smirnov, A. N, Kirilenko, D. A, Remškar, M, Fathipour, S, Mintairov, A, Seabaugh, A, Gil, B, Shubina, T. V
Year of Publication 04.07.2018
Year of Publication 04.07.2018
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Journal Article
Analysis of a source hetrojunction LDMOS device with strained silicon channel
Fathipour, V., Malakoutian, M. A., Fathipour, S., Fathipour, M.
Published in 2011 19th Iranian Conference on Electrical Engineering (01.05.2011)
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Published in 2011 19th Iranian Conference on Electrical Engineering (01.05.2011)
Conference Proceeding
Analysis of a source hetrojunction LDMOS device with strained silicon channel
Fathipour, V., Malakoutian, M. A., Fathipour, S., Fathipour, M.
Published in 2011 19th Iranian Conference on Electrical Engineering (01.05.2011)
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Published in 2011 19th Iranian Conference on Electrical Engineering (01.05.2011)
Conference Proceeding
The impact of process parameter variations on the electrical characteristics of a RESURF LDMOS and its compact modeling
Fathipour, V., Mojab, A., Malakoutian, M. A., Fathipour, S., Fathipour, M.
Published in 2011 International Semiconductor Device Research Symposium (ISDRS) (01.12.2011)
Published in 2011 International Semiconductor Device Research Symposium (ISDRS) (01.12.2011)
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Conference Proceeding