An accurate gate length extraction method for sub-quarter micron MOSFET's
Cheng-Liang Huang, Faricelli, J.V., Antoniadis, D.A., Khalil, N.A., Rios, R.A.
Published in IEEE transactions on electron devices (01.06.1996)
Published in IEEE transactions on electron devices (01.06.1996)
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Journal Article
A new technique for measuring MOSFET inversion layer mobility
Huang, C.-L., Faricelli, J.V., Arora, N.D.
Published in IEEE transactions on electron devices (01.06.1993)
Published in IEEE transactions on electron devices (01.06.1993)
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Journal Article
Fabrication and analysis of 1/2µm Silicon logic MESFET's
Nulman, J., Faricelli, J.V., Krusius, J.P., Frey, J.
Published in IEEE transactions on electron devices (01.10.1983)
Published in IEEE transactions on electron devices (01.10.1983)
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Journal Article
Physical basis of short-channel MESFET operation II: Transient behavior
Faricelli, J.V., Frey, J., Krusius, J.P.
Published in IEEE transactions on electron devices (01.03.1982)
Published in IEEE transactions on electron devices (01.03.1982)
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Journal Article