AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure
Fang, Yulong, Feng, Zhihong, Yin, Jiayun, Zhou, Xingye, Wang, Yuangang, Gu, Guodong, Song, Xubo, Lv, Yuanjie, Li, Chengming, Cai, Shujun
Published in IEEE transactions on electron devices (01.12.2014)
Published in IEEE transactions on electron devices (01.12.2014)
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Journal Article
Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth
Guo, Yanmin, Fang, Yulong, Yin, Jiayun, Zhang, Zhirong, Wang, Bo, Li, Jia, Lu, Weili, Feng, Zhihong
Published in Journal of crystal growth (15.04.2017)
Published in Journal of crystal growth (15.04.2017)
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Journal Article
Reliability Assessment of InAlN/GaN HFETs With Lifetime 8.9\times 10^} h
Wang, Yuangang, Lv, Yuanjie, Song, Xubo, Chi, Lei, Yin, Jiayun, Zhou, Xingye, Fang, Yulong, Tan, Xin, Guo, Hongyu, Peng, Hao, Gu, Guodong, Feng, Zhihong, Cai, Shujun
Published in IEEE electron device letters (01.05.2017)
Published in IEEE electron device letters (01.05.2017)
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Journal Article
High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET
Wang, Yuangang, Guo, Hongyu, Fang, Yulong, Feng, Zhihong, Cai, Shujun, Lv, Yuanjie, Zhou, Xingye, Yin, Jiayun, Han, Tingting, Gu, Guodong, Song, Xubo, Tan, Xin, Dun, Shaobo
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors
Dun, Shaobo, Jiang, Yang, Li, Jingqiang, Fang, Yulong, Yin, Jiayun, Liu, Bo, Wang, Jingjing, Chen, Hong, Feng, Zhihong, Cai, Shujun
Published in Physica status solidi. A, Applications and materials science (01.06.2012)
Published in Physica status solidi. A, Applications and materials science (01.06.2012)
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Journal Article
A magnetically recyclable magnetic graphite oxide composite functionalized with polydopamine and β-cyclodextrin for cationic dyes wastewater remediation: Investigation on adsorption performance, reusability and adsorption mechanism
Yan, Jiahe, Li, Keran, Yan, Jikang, Fang, Yulong, Liu, Bin
Published in Applied surface science (15.11.2022)
Published in Applied surface science (15.11.2022)
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Journal Article
Construction of Nursing Sequential Decision Knowledge Graph from the Perspective of International Standard Terminology
Yulong, Fang, Yue, Sun, Zejing, Wang, Daxiong, Xu, Hao, Zhou, Huazhen, Wang
Published in 2023 IEEE International Conference on Bioinformatics and Biomedicine (BIBM) (05.12.2023)
Published in 2023 IEEE International Conference on Bioinformatics and Biomedicine (BIBM) (05.12.2023)
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Conference Proceeding
A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
Liu, Bo (波刘), Feng, Zhihong (志红冯), Zhang, Sen (森张), Dun, Shaobo (少博敦), Yin, Jiayun (甲运尹), Li, Jia (佳李), Wang, Jingjing (晶晶王), Zhang, Xiaowei (效帏张), Fang, Yulong (玉龙房), Cai, Shujun (树军蔡)
Published in Journal of semiconductors (01.12.2011)
Published in Journal of semiconductors (01.12.2011)
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Journal Article
Novel N-ZnO/p-BN adsorption-photocatalytic composites with interfacial bonding for efficient synergistic degradation of pollutants in water
Cai, Huayi, Zhang, Hui, Gao, Nan, Fang, Yi, Xie, Xinjian, Fang, Yulong, Chen, Guifeng
Published in Applied surface science (21.12.2024)
Published in Applied surface science (21.12.2024)
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Journal Article
Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process
Lin, Peng, Niu, Nannan, Zuo, Ran, Fang, Yulong, Feng, Zhihong
Published in Applied surface science (01.04.2021)
Published in Applied surface science (01.04.2021)
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Journal Article
Simulation and preparation of FBARs based on AlN thin films
Qi, Hongfei, Zhang, Hui, Gao, Nan, Fang, Yi, Xie, Xinjian, Bian, Lifeng, Fang, Yulong, Chen, Guifeng
Published in Materials science in semiconductor processing (01.01.2025)
Published in Materials science in semiconductor processing (01.01.2025)
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Journal Article
Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations
Song, Yuxuan, Zhang, Hui, Gao, Nan, Li, Chaoyuan, Xie, Xinjian, Bian, Lifeng, Fang, Yulong, Chen, Guifeng
Published in Materials science in semiconductor processing (01.11.2024)
Published in Materials science in semiconductor processing (01.11.2024)
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Journal Article
Study and reduction of the surface pits in 4H-SiC epitaxial wafer
Lu, Weili, Fang, Yulong, Li, Jia, Yin, Jiayun, Wang, Bo, Gao, Nan, Zhang, Zhirong, Chen, Hongtai, Niu, Chenliang
Published in Journal of crystal growth (15.05.2023)
Published in Journal of crystal growth (15.05.2023)
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Journal Article
Influence of inlet structures of planetary reactor on gas reaction path in AlN-MOVPE process
Mao, Yanlin, Zuo, Ran, Fang, Yulong, Yin, Jiayun, Guo, Yanmin, Feng, Zhihong
Published in Journal of crystal growth (15.01.2021)
Published in Journal of crystal growth (15.01.2021)
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Journal Article
High-frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D-band PA applications
Lv, Yuanjie, Song, Xubo, Guo, Hongyu, Fang, Yulong, Feng, Zhihong
Published in Electronics letters (21.07.2016)
Published in Electronics letters (21.07.2016)
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Journal Article
GaN planar Schottky barrier diode with cut-off frequency of 902 GHz
Liang, Shixiong, Fang, Yulong, Xing, Dong, Zhang, Zhirong, Wang, Junlong, Guo, Hongyu, Zhang, Lisen, Gu, Guodong, Feng, Zhihong
Published in Electronics letters (04.08.2016)
Published in Electronics letters (04.08.2016)
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Journal Article