High-Temperature Retention Stability of Multibit Ferroelectric HfZrO₂ FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window
Yao, Yi-Ju, Lin, Tsai-Jung, Wei, Chen-You, Chen, Bo-Xu, Fang, Yung-Teng, Chang, Heng-Jia, Fu, Yu-Min, Luo, Guang-Li, Hou, Fu-Ju, Wu, Yung-Chun
Published in IEEE transactions on electron devices (01.10.2024)
Published in IEEE transactions on electron devices (01.10.2024)
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