A highly reliable ferroelectric memory technology with SrBi2 Ta2O9-based material and metal covering cell structure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
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Journal Article
A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure
Fajii, E., Judai, Y., Ito, T., Kutsunai, T., Nagano, Y., Noma, A., Nasu, T., Izutsu, Y., Mikawa, T., Yasuoka, H., Azuma, M., Shimada, Y., Sasai, Y., Sato, K., Otsuki, T.
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
Get full text
Journal Article
A highly reliable ferroelectric memory technology with SrBi)2)Ta)2)O)9)-based material and metal covering cellstructure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
Get full text
Journal Article
A highly reliable ferroelectric memory technology with SrBi sub(2 )Ta sub(2)O sub(9)-bas ed material and metal covering cell structure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.01.2001)
Published in IEEE transactions on electron devices (01.01.2001)
Get full text
Journal Article