Noise modeling and SiGe profile design tradeoffs for RFapplications HBTs
Niu, Guofu, Zhang, Shiming, Cressler, J D, Joseph, A J, Fairbanks, J S, Larson, L E, Webster, C S, Ansley, W E, Harame, D L
Published in IEEE transactions on electron devices (01.11.2000)
Published in IEEE transactions on electron devices (01.11.2000)
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Journal Article
Noise parameter modeling and SiGe profile design tradeoffs for RF applications
Guofu Niu, Shiming Zhang, Cressler, J.D., Joseph, A.J., Fairbanks, J.S., Larson, L.E., Webster, C.S., Ansley, W.E., Harame, D.L.
Published in 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397) (2000)
Published in 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397) (2000)
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Conference Proceeding
Noise modeling and SiGe profile design tradeoffs for RF applications HBTs
Niu, Guofu, Zhang, Shiming, Cressler, J D, Joseph, A J, Fairbanks, J S, Larson, LE, Webster, C S, Ansley, W E, Harame, D L
Published in IEEE transactions on electron devices (01.01.2000)
Published in IEEE transactions on electron devices (01.01.2000)
Get full text
Journal Article
Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs]
Guofu Niu, Shiming Zhang, Cressler, J.D., Joseph, A.J., Fairbanks, J.S., Larson, L.E., Webster, C.S., Ansley, W.E., Harame, D.L.
Published in IEEE transactions on electron devices (01.11.2000)
Published in IEEE transactions on electron devices (01.11.2000)
Get full text
Journal Article
ELECTRON MICROSCOPE
COLEMAN J,US, FAIRBANKS J,US, JOHNSON G,US, SCHULER J,US, MC LAUGHLIN P,US, NEWTON K,US, MC GINNIS J,US, HOFFMAN A,US
Year of Publication 04.06.1974
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Year of Publication 04.06.1974
Patent