Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon
Yacoub, Hady, Zweipfennig, Thorsten, Lukens, Gerrit, Behmenburg, Hannes, Fahle, Dirk, Eickelkamp, Martin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei
Published in IEEE transactions on electron devices (01.08.2018)
Published in IEEE transactions on electron devices (01.08.2018)
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Journal Article
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan
Published in Scientific reports (23.09.2023)
Published in Scientific reports (23.09.2023)
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Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model
Pradhan, Mamta, Alomari, Mohammed, Moser, Matthias, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Burghartz, Joachim N.
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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Journal Article
Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate
Heuken, Lars, Alshahed, Muhammad, Ottaviani, Alessandro, Alomari, Mohammed, Fahle, Dirk, Heuken, Michael, Burghartz, Joachim N.
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates
Li, Xiangdong, Geens, Karen, Guo, Weiming, You, Shuzhen, Zhao, Ming, Fahle, Dirk, Odnoblyudov, Vladimir, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate
Heuken, Lars, Ottaviani, Alessandro, Fahle, Dirk, Zweipfennig, Thorsten, Lükens, Gerrit, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Burghartz, Joachim N.
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates
Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE transactions on semiconductor manufacturing (01.11.2020)
Published in IEEE transactions on semiconductor manufacturing (01.11.2020)
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Journal Article
Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate
Heuken, Lars, Ottaviani, Alessandro, Fahle, Dirk, Zweipfennig, Thorsten, Lükens, Gerrit, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Burghartz, Joachim N.
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Vertical GaN devices: Process and reliability
You, Shuzhen, Geens, Karen, Borga, Matteo, Liang, Hu, Hahn, Herwig, Fahle, Dirk, Heuken, Michael, Mukherjee, Kalparupa, De Santi, Carlo, Meneghini, Matteo, Zanoni, Enrico, Berg, Martin, Ramvall, Peter, Kumar, Ashutosh, Björk, Mikael T., Ohlsson, B. Jonas, Decoutere, Stefaan
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Journal Article
In-situ decomposition and etching of AlN and GaN in the presence of HCl
Fahle, Dirk, Kruecken, Thomas, Dauelsberg, Martin, Kalisch, Holger, Heuken, Michael, Vescan, Andrei
Published in Journal of crystal growth (01.05.2014)
Published in Journal of crystal growth (01.05.2014)
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Conference Proceeding
Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate
Eickelkamp, Martin, Fahle, Dirk, Lindner, Johannes, Heuken, Michael, Lautensack, Christian, Kalisch, Holger, Jansen, Rolf H., Vescan, Andrei
Published in Physica status solidi. A, Applications and materials science (01.06.2010)
Published in Physica status solidi. A, Applications and materials science (01.06.2010)
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Journal Article
CMOS-compatible Ti/Al ohmic contacts (Rc °C)
Zhihong Liu, Heuken, Michael, Fahle, Dirk, Ng, G. I., Palacios, Tomas
Published in 72nd Device Research Conference (01.06.2014)
Published in 72nd Device Research Conference (01.06.2014)
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Conference Proceeding
Impact of gate dielectric thickness on applications and materials the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate
EICKELKAMP, Martin, FAHLE, Dirk, LINDNER, Johannes, HEUKEN, Michael, LAUTENSACK, Christian, KALISCH, Holger, JANSEN, Rolf H, VESCAN, Andrei
Published in Physica status solidi. A, Applications and materials science (2010)
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Published in Physica status solidi. A, Applications and materials science (2010)
Journal Article
650 V p-GaN Gate Power HEMTs on 200 mm Engineered Substrates
Geens, Karen, Li, Xiangdong, Zhao, Ming, Guo, Weiming, Wellekens, Dirk, Posthuma, Niels, Fahle, Dirk, Aktas, Ozgur, Odnoblyudov, Vlad, Decoutere, Stefaan
Published in 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (01.10.2019)
Published in 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (01.10.2019)
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Conference Proceeding
Vertical GaN Devices: Process and Reliability
You, Shuzhen, Geens, Karen, Borga, Matteo, Hu, Liang, Hahn, Herwig, Fahle, Dirk, Heuken, Michael, Mukherjee, Kalparupa, De Santi, Carlo, Meneghini, Matteo, Zanoni, Enrico, Berg, Martin, Ramvall, Peter, Kumar, Ashutosh, Björk, Mikael T, B Jonas Ohlsson, Decoutere, Stefaan
Published in arXiv.org (07.07.2021)
Published in arXiv.org (07.07.2021)
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