Defect structure of 4H silicon carbide ingots
Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu
Published in Journal of crystal growth (01.03.2011)
Published in Journal of crystal growth (01.03.2011)
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Journal Article
Mechanisms of defect formation in ingots of 4H silicon carbide polytype
Avrov, D. D., Bulatov, A. V., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M., Fadeev, A. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.03.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2011)
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Journal Article
Fractality of Porous Silicas: A Comparison of Adsorption and Porosimetry Data
Fadeev, Alexander Yu, Borisova, Olga R., Lisichkin, George V.
Published in Journal of colloid and interface science (15.10.1996)
Published in Journal of colloid and interface science (15.10.1996)
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Journal Article
DEVICE FOR MEASURING SLIDING DIFFERENCE OF TWO SUCCESSIVE VALUES OF A VARIABLE
POKAZIJ YU.N.,SU, STARSHINOV B.N.,SU, GUDYRYA V.A.,SU, YANKELEVICH V.M.,SU, FADEEV A.YU.,SU, IZYUMSKIJ F.P.,SU
Year of Publication 15.02.1978
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Year of Publication 15.02.1978
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