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Published in Jpn J Appl Phys (25.04.2012)
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Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy
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Published in Jpn J Appl Phys (01.08.2011)
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Published in Jpn J Appl Phys (01.11.2012)
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Year of Publication 03.08.2017
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Interface States in p-Type GaAs/GaAs 1-x Bi x Heterostructure
Fuyuki, Takuma, Kashiyama, Shota, Oe, Kunishige, Yoshimoto, Masahiro
Published in Japanese Journal of Applied Physics (01.11.2012)
Published in Japanese Journal of Applied Physics (01.11.2012)
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Journal Article
Interface States in p-Type GaAs/GaAs 1- x Bi x Heterostructure
Fuyuki, Takuma, Kashiyama, Shota, Oe, Kunishige, Yoshimoto, Masahiro
Published in Japanese Journal of Applied Physics (01.11.2012)
Published in Japanese Journal of Applied Physics (01.11.2012)
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SEMICONDUCTOR LAMINATE, LIGHT RECEIVING ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR LAMINATE
FUYUKI TAKUMA, YOSHIZUMI YUSUKE, AKITA KATSUSHI, ARIKATA SUGURU, KYONO TAKASHI
Year of Publication 08.12.2016
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Year of Publication 08.12.2016
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Year of Publication 27.10.2016
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High Hole Mobility in GaAs 1-x Bi x Alloys
Kado, Kosuke, Fuyuki, Takuma, Yamada, Kazuya, Oe, Kunishige, Yoshimoto, Masahiro
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
Get full text
Journal Article