Search Results - "FUSELIER, Mark" :: K.UTB vyhledávací portál

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SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

by Wei, Andy C, Wristers, Derick J, Fuselier, Mark B
Year of Publication 09.06.2009

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SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

by WRISTERS DERICK J, WEI ANDY C, FUSELIER MARK B
Year of Publication 09.06.2009

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Transistors with controllable threshold voltages, and various methods of making and operating same

by WRISTERS DERICK J, FUSELIER MARK B, WEI ANDY C
Year of Publication 07.10.2008

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Transistors with controllable threshold voltages, and various methods of making and operating same

by Fuselier, Mark B, Wristers, Derick J, Wei, Andy C
Year of Publication 07.10.2008

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Dotierverfahren für vollständig verarmte SOI-Strukturen

by WRISTERS, DERICK J, WEI, ANDY C, FUSELIER, MARK B
Year of Publication 25.09.2008

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Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

by WRISTERS DERICK J, WEI ANDY C, FUSELIER MARK B
Year of Publication 26.02.2008

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Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

by Wristers, Derick J, Wei, Andy C, Fuselier, Mark B
Year of Publication 26.02.2008

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Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same

by Fuselier, Mark, Wristers, Derick, Wei, Andy
Year of Publication 04.11.2004

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Semiconductor component and method of manufacture

by EHRICHS EDWARD E, FUSELIER MARK B
Year of Publication 19.10.2004

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Semiconductor component and method of manufacture

by Ehrichs, Edward E, Fuselier, Mark B
Year of Publication 19.10.2004

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BIASED, TRIPLE-WELL FULLY DEPLETED SOI STRUCTURE, AND VARIOUS METHODS OF MAKING AND OPERATING SAME

by WRISTERS, DERICK, J, WEI, ANDY, C, FUSELIER, MARK, B
Year of Publication 23.01.2008

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Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions

by Wei, Andy, Wristers, Derick, Fuselier, Mark
Year of Publication 02.09.2004

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Based, triple-well fully depleted SOI structure, and various methods of making and operating same

by WEI ANDY C.,WRISTERS DERICK J.,FUSELIER MARK B
Year of Publication 31.10.2007

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Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same

by WRISTERS, DERICK J, FUSELIER, MARK B, WEI, ANDY C
Year of Publication 11.09.2007

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Verfahren zur Herstellung Asymmetrischer Seitenwand-Abstandshalter eines Halbleiterbauelements

by WEINTRAUB, CHAD, RAY, DOUG S, FUSELIER, MARK B, BULLER, JAMES F, EHRICHS, EDWARD E
Year of Publication 17.06.2010

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Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

by Wei, Andy, Wristers, Derick, Fuselier, Mark
Year of Publication 11.12.2003

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Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

by Wei, Andy, Wristers, Derick, Fuselier, Mark
Year of Publication 04.12.2003

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Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same

by FUSELIER MARK B.,WRISTERS DERICK J.,WEI ANDY C
Year of Publication 11.04.2007

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Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

by WRISTERS, DERICK J, WEI, ANDY C, FUSELIER, MARK B
Year of Publication 01.04.2007

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DOPING METHODS FOR FULLY-DEPLETED SOI STRUCTURES, AND DEVICE COMPRISING THE RESULTING DOPED REGIONS

by Wei, Andy, Wristers, Derick, Fuselier, Mark
Year of Publication 25.09.2003

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