Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy
Kajiwara, Kaoru, Eriguchi, Kazutaka, Fusegawa, Kazuhiro, Mitsugi, Noritomo, Samata, Shuichi, Torigoe, Kazuhisa, Harada, Kazuhiro, Hourai, Masataka, Nishizawa, Shin-ichi
Published in Japanese Journal of Applied Physics (01.07.2023)
Published in Japanese Journal of Applied Physics (01.07.2023)
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Journal Article
Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors
Kajiwara, Kaoru, Eriguchi, Kazutaka, Fusegawa, Kazuhiro, Mitsugi, Noritomo, Samata, Shuichi, Torigoe, Kazuhisa, Harada, Kazuhiro, Hourai, Masataka, Nishizawa, Shin-Ichi
Published in IEEE transactions on semiconductor manufacturing (01.11.2022)
Published in IEEE transactions on semiconductor manufacturing (01.11.2022)
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Journal Article
N+p Junction Leakage Current in p/p+ Epitaxial Wafers
Murakami, Yoshio, Fusegawa, Kazuhiro, Matsukawa, Kazuhiro
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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