Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks
Fukuhara, Noboru, Horikiri, Fumimasa, Yamamoto, Taiki, Osada, Takenori, Kasahara, Kenji, Inoue, Takayuki, Egawa, Takashi
Published in Journal of applied physics (28.02.2023)
Published in Journal of applied physics (28.02.2023)
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Journal Article
Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)
Toguchi, Masachika, Miwa, Kazuki, Horikiri, Fumimasa, Fukuhara, Noboru, Narita, Yoshinobu, Ichikawa, Osamu, Isono, Ryota, Tanaka, Takeshi, Sato, Taketomo
Published in Journal of applied physics (14.07.2021)
Published in Journal of applied physics (14.07.2021)
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Journal Article
Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy
Imabayashi, Hiroki, Yasui, Yuto, Horikiri, Fumimasa, Narita, Yoshinobu, Fukuhara, Noboru, Mishima, Tomoyoshi, Shiojima, Kenji
Published in Japanese Journal of Applied Physics (01.01.2023)
Published in Japanese Journal of Applied Physics (01.01.2023)
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Journal Article
Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes
Shiojima, Kenji, Matsuda, Ryo, Horikiri, Fumimasa, Narita, Yoshinobu, Fukuhara, Noboru, Mishima, Tomoyoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples
Matsuda, Ryo, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Fukuhara, Noboru, Mishima, Tomoyoshi, Shiojima, Kenji
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article
Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures
Miwa, Kazuki, Komatsu, Yuto, Toguchi, Masachika, Horikiri, Fumimasa, Fukuhara, Noboru, Narita, Yoshinobu, Ichikawa, Osamu, Isono, Ryota, Tanaka, Takeshi, Sato, Taketomo
Published in Applied physics express (01.02.2020)
Published in Applied physics express (01.02.2020)
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Journal Article
Thermal-assisted contactless photoelectrochemical etching for GaN
Horikiri, Fumimasa, Fukuhara, Noboru, Ohta, Hiroshi, Asai, Naomi, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi, Toguchi, Masachika, Miwa, Kazuki, Ogami, Hiroki, Sato, Taketomo
Published in Applied physics express (01.04.2020)
Published in Applied physics express (01.04.2020)
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Journal Article
Formation of III-V-on-insulator structures on Si by direct wafer bonding
Yokoyama, Masafumi, Iida, Ryo, Ikku, Yuki, Kim, Sanghyeon, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi
Published in Semiconductor science and technology (01.09.2013)
Published in Semiconductor science and technology (01.09.2013)
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Journal Article
Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
Suzuki, Rena, Taoka, Noriyuki, Yokoyama, Masafumi, Kim, Sang-Hyeon, Hoshii, Takuya, Maeda, Tatsuro, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi
Published in Journal of applied physics (15.10.2012)
Published in Journal of applied physics (15.10.2012)
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Journal Article
Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system
Aoki, Takeshi, Fukuhara, Noboru, Osada, Takenori, Sazawa, Hiroyuki, Hata, Masahiko, Inoue, Takayuki
Published in AIP advances (01.08.2015)
Published in AIP advances (01.08.2015)
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Journal Article
Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
Kim, SangHyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Iida, Ryo, Lee, Sunghoon, Nakane, Ryosho, Urabe, Yuji, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi
Published in Applied physics express (25.02.2011)
Published in Applied physics express (25.02.2011)
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Journal Article
Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
Yokoyama, Masafumi, Yasuda, Tetsuji, Takagi, Hideki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi
Published in Applied physics express (01.12.2009)
Published in Applied physics express (01.12.2009)
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Journal Article
Radiation therapy in patients with implanted cardiac pacemakers and implantable cardioverter defibrillators: a prospective survey in Japan
Soejima, Toshinori, Yoden, Eisaku, NIshimura, Yasumasa, Ono, Seiji, Yoshida, Akihiro, Fukuda, Haruyuki, Fukuhara, Noboru, Sasaki, Ryohei, Tsujino, Kayoko, Norihisa, Yoshiki
Published in Journal of radiation research (2011)
Published in Journal of radiation research (2011)
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Journal Article
III--V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
Yokoyama, Masafumi, Kim, Sanghyeon, Zhang, Rui, Taoka, Noriyuki, Urabe, Yuji, Maeda, Tatsuro, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi
Published in Applied physics express (01.07.2012)
Published in Applied physics express (01.07.2012)
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Journal Article
High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
Ishii, Hiroyuki, Miyata, Noriyuki, Urabe, Yuji, Itatani, Taro, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Deura, Momoko, Sugiyama, Masakazu, Takenaka, Mitsuru, Takagi, Shinichi
Published in Applied physics express (01.12.2009)
Published in Applied physics express (01.12.2009)
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Journal Article
Clinical Efficacy of Cepharanthin(R)for Radiotherapy-Induced Leukopenia - A Nationwide, Multicenter, and Observational Study
Kanamori, Shuichi, Hiraoka, Masahiro, Fukuhara, Noboru, Oizumi, Yukio, Danjo, Atsushi, Nakata, Kensei, Owaki, Kazuhiko, Nishimura, Yasumasa
Published in Gan to kagaku ryoho (01.09.2016)
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Published in Gan to kagaku ryoho (01.09.2016)
Journal Article
High current gain stability of carbon-doped p-GaAs in InGaP/GaAs heterojunction bipolar transistors
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Journal Article
Conference Proceeding
Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Nakano, Takayuki, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro
Published in Japanese Journal of Applied Physics (01.01.2011)
Published in Japanese Journal of Applied Physics (01.01.2011)
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Journal Article
Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Nakano, Takayuki, Sugiyama, Masakazu, Nakano, Yoshiaki, Shimogaki, Yukihiro
Published in Japanese Journal of Applied Physics (01.01.2011)
Published in Japanese Journal of Applied Physics (01.01.2011)
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Journal Article