Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions
Takahashi, Tomonori, Fukatsu, Shigeto, Itoh, Kohei M., Uematsu, Masashi, Fujiwara, Akira, Kageshima, Hiroyuki, Takahashi, Yasuo, Shiraishi, Kenji
Published in Journal of applied physics (15.03.2003)
Published in Journal of applied physics (15.03.2003)
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Journal Article
Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistors
Masada, Akiko, Hirano, Izumi, Fukatsu, Shigeto, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.07.2010)
Published in Japanese Journal of Applied Physics (01.07.2010)
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Journal Article
Simulation of correlated diffusion of Si and B in thermally grown SiO2
Uematsu, Masashi, Kageshima, Hiroyuki, Takahashi, Yasuo, Fukatsu, Shigeto, Itoh, Kohei M., Shiraishi, Kenji
Published in Journal of applied physics (15.11.2004)
Published in Journal of applied physics (15.11.2004)
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Journal Article
EFFECT OF PARTIAL PRESSURE OF OXYGEN ON SELF-DIFFUSION OF Si IN SiO2
Fukatsu, S, Takahashi, T, Itoh, K M, Uematsu, M, Fujiwara, A, Kageshima, H, Takahashi, Y
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 42, no. 12B, pp. L1492-L1494. 2003 (15.12.2003)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 42, no. 12B, pp. L1492-L1494. 2003 (15.12.2003)
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Journal Article
Clamping Capability of Parasitic p-n Diode in SBD-Embedded SiC MOSFETs
Ohashi, Teruyuki, Kono, Hiroshi, Kanie, Souzou, Ogata, Takahiro, Sano, Kenya, Hayakawa, Hideki, Asaba, Shunsuke, Fukatsu, Shigeto, Iijima, Ryosuke
Published in IEEE transactions on electron devices (01.10.2022)
Published in IEEE transactions on electron devices (01.10.2022)
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Journal Article
Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics
Hirano, I., Nakasaki, Y., Fukatsu, S., Masada, A., Mitani, Y., Goto, M., Nagatomo, K., Inumiya, S., Sekine, K.
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
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Conference Proceeding
Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion
UEMATSU, Masashi, KAGESHIMA, Hiroyuki, FUKATSU, Shigeto, ITOH, Kohei M, SHIRAISHI, Kenji, OTANI, Minoru, OSHIYAMA, Atsushi
Published in Thin solid films (01.06.2006)
Published in Thin solid films (01.06.2006)
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Conference Proceeding
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SEMICONDUCTOR DEVICE MANUFACTURING METHOD
ITO TOSHIHIDE, IIJIMA RYOSUKE, NISHIO JOJI, SHIMIZU TATSUO, OTA CHIHARU, FUKATSU SHIGETO, NAKABAYASHI YUKIO
Year of Publication 29.03.2023
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Year of Publication 29.03.2023
Patent
Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-embedded SiC MOSFET
Ohashi, Teruyuki, Kono, Hiroshi, Kanie, Souzou, Ogata, Takahiro, Sano, Kenya, Suzuki, Hisashi, Asaba, Shunsuke, Fukatsu, Shigeto, Iijima, Ryosuke
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
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Conference Proceeding
SEMICONDUCTOR DEVICE
SUZUKI TAKUMA, FURUKAWA MASARU, KONO HIROSHI, FUKATSU SHIGETO, ASABA SHUNSUKE
Year of Publication 17.09.2020
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Year of Publication 17.09.2020
Patent
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
ITO TOSHIHIDE, IIJIMA RYOSUKE, FUKATSU SHIGETO, ASABA SHUNSUKE, NAKABAYASHI YUKIO
Year of Publication 06.12.2018
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Year of Publication 06.12.2018
Patent
3.2 m[Omega]cm2 enhancement-mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article
3.2 mΩcm 2 enhancement‐mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article
3.2 m Omega cm super(2) enhancement-mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article
3.2 mΩcm2 enhancement-mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing
Hirano, Izumi, Nakasaki, Yasushi, Fukatsu, Shigeto, Goto, Masakazu, Nagatomo, Koji, Inumiya, Seiji, Sekine, Katsuyuki, Mitani, Yuichiro, Yamabe, Kikuo
Published in Microelectronics and reliability (01.12.2013)
Published in Microelectronics and reliability (01.12.2013)
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