Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas
Miura, Yutaka, Habuka, Hitoshi, Katsumi, Yusuke, Oda, Satoko, Fukai, Yasushi, Fukae, Katsuya, Kato, Tomohisa, Okumura, Hajime, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.12.2007)
Published in Japanese Journal of Applied Physics (01.12.2007)
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Silicon Carbide Etching Using Chlorine Trifluoride Gas
Habuka, Hitoshi, Oda, Satoko, Fukai, Yasushi, Fukae, Katsuya, Takeuchi, Takashi, Aihara, Masahiko
Published in Japanese Journal of Applied Physics (01.03.2005)
Published in Japanese Journal of Applied Physics (01.03.2005)
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Change in resonance parameters of a linear molecule as it bends: Evidence in electron-impact vibrational transitions of hot COS and CO2 molecules
Hoshino, Masamitsu, Ishijima, Yohei, Kato, Hidetoshi, Mogi, Daisuke, Takahashi, Yoshinao, Fukae, Katsuya, Limão-Vieira, Paulo, Tanaka, Hiroshi, Shimamura, Isao
Published in The European physical journal. D, Atomic, molecular, and optical physics (03.05.2016)
Published in The European physical journal. D, Atomic, molecular, and optical physics (03.05.2016)
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Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas
Miura, Yutaka, Kasahara, Yu, Habuka, Hitoshi, Takechi, Naoto, Fukae, Katsuya
Published in Japanese Journal of Applied Physics (01.02.2009)
Published in Japanese Journal of Applied Physics (01.02.2009)
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Etch rate and surface morphology of polycrystalline β-silicon carbide using chlorine trifluoride gas
Habuka, Hitoshi, Oda, Satoko, Fukai, Yasushi, Fukae, Katsuya, Takeuchi, Takashi, Aihara, Masahiko
Published in Thin solid films (30.08.2006)
Published in Thin solid films (30.08.2006)
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Etch Pits of 4H-Silicon Carbide Surface Formed Using Chlorine Trifluoride Gas
Habuka, Hitoshi, Furukawa, Kazuchika, Tanaka, Keiko, Katsumi, Yusuke, Takechi, Naoto, Fukae, Katsuya, Kato, Tomohisa
Published in ECS transactions (16.04.2010)
Published in ECS transactions (16.04.2010)
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