High-quality nonpolar m -plane GaN substrates grown by HVPE
Fujito, Kenji, Kiyomi, Kazumasa, Mochizuki, Tae, Oota, Hirotaka, Namita, Hideo, Nagao, Satoru, Fujimura, Isao
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
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Journal Article
Conference Proceeding
Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
Schmidt, Mathew C., Kim, Kwang-Choong, Farrell, Robert M., Feezell, Daniel F., Cohen, Daniel A., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Japanese Journal of Applied Physics (01.03.2007)
Published in Japanese Journal of Applied Physics (01.03.2007)
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Journal Article
High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds
Tsukada, Yusuke, Enatsu, Yuuki, Kubo, Shuichi, Ikeda, Hirotaka, Kurihara, Kaori, Matsumoto, Hajime, Nagao, Satoru, Mikawa, Yutaka, Fujito, Kenji
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam
Uedono, Akira, Tsukada, Yusuke, Mikawa, Yutaka, Mochizuki, Tae, Fujisawa, Hideo, Ikeda, Hirotaka, Kurihara, Kaori, Fujito, Kenji, Terada, Shigeru, Ishibashi, Shoji, Chichibu, Shigefusa F.
Published in Journal of crystal growth (15.08.2016)
Published in Journal of crystal growth (15.08.2016)
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Journal Article
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes
Zhao, Yuji, Yan, Qimin, Feezell, Daniel, Fujito, Kenji, Van de Walle, Chris G, Speck, James S, DenBaars, Steven P, Nakamura, Shuji
Published in Optics express (14.01.2013)
Published in Optics express (14.01.2013)
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Journal Article
30-mW-Class High-Power and High-Efficiency Blue Semipolar ($10\bar{1}\bar{1}$) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
Zhao, Yuji, Sonoda, Junichi, Pan, Chih-Chien, Brinkley, Stuart, Koslow, Ingrid, Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P, Nakamura, Shuji
Published in Applied physics express (01.10.2010)
Published in Applied physics express (01.10.2010)
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Journal Article
Spectroscopic ellipsometry studies on the m-plane Al1−xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate
Kojima, Kazunobu, Kagaya, Daiki, Yamazaki, Yoshiki, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F.
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
Lin, You-Da, Yamamoto, Shuichiro, Huang, Chia-Yen, Hsiung, Chia-Lin, Wu, Feng, Fujito, Kenji, Ohta, Hiroaki, Speck, James S, DenBaars, Steven P, Nakamura, Shuji
Published in Applied physics express (01.08.2010)
Published in Applied physics express (01.08.2010)
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Journal Article
High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate
Iso, Kenji, Yamada, Hisashi, Hirasawa, Hirohiko, Fellows, Natalie, Saito, Makoto, Fujito, Kenji, DenBaars, Steven P., Speck, James S., Nakamura, Shuji
Published in Japanese Journal of Applied Physics (01.10.2007)
Published in Japanese Journal of Applied Physics (01.10.2007)
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Journal Article
Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence
Furusawa, Kentaro, Ishikawa, Yoichi, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F.
Published in Japanese Journal of Applied Physics (01.03.2015)
Published in Japanese Journal of Applied Physics (01.03.2015)
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Journal Article
Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer
Kojima, Kazunobu, Tsukada, Yusuke, Furukawa, Erika, Saito, Makoto, Mikawa, Yutaka, Kubo, Shuichi, Ikeda, Hirotaka, Fujito, Kenji, Uedono, Akira, Chichibu, Shigefusa F.
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes
Farrell, Robert M., Feezell, Daniel F., Schmidt, Mathew C., Haeger, Daniel A., Kelchner, Kathryn M., Iso, Kenji, Yamada, Hisashi, Saito, Makoto, Fujito, Kenji, Cohen, Daniel A., Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Japanese Journal of Applied Physics (01.08.2007)
Published in Japanese Journal of Applied Physics (01.08.2007)
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Journal Article
Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes
Yamada, Hisashi, Iso, Kenji, Masui, Hisashi, Saito, Makoto, Fujito, Kenji, DenBaars, Steven P., Nakamura, Shuji
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Conference Proceeding
InGaN/GaN Blue Laser Diode Grown on Semipolar $(30\bar{3}1)$ Free-Standing GaN Substrates
Hsu, Po Shan, Kelchner, Kathryn M, Tyagi, Anurag, Farrell, Robert M, Haeger, Daniel A, Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P, Speck, James S, Nakamura, Shuji
Published in Applied physics express (01.05.2010)
Published in Applied physics express (01.05.2010)
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Journal Article
Status and perspectives of the ammonothermal growth of GaN substrates
Hashimoto, Tadao, Wu, Feng, Saito, Makoto, Fujito, Kenji, Speck, James S., Nakamura, Shuji
Published in Journal of crystal growth (01.03.2008)
Published in Journal of crystal growth (01.03.2008)
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Journal Article
Conference Proceeding