Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
Ikeda, Hirotaka, Nagao, Satoru, Fujisawa, Hideo, Mikawa, Yutaka, Mochizuki, Tae, Fujito, Kenji, Kamada, Kazunori, Tsukada, Yusuke, Kubo, Shuichi
Year of Publication 15.06.2021
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Year of Publication 15.06.2021
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Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
Ikeda, Hirotaka, Nagao, Satoru, Fujisawa, Hideo, Mikawa, Yutaka, Mochizuki, Tae, Fujito, Kenji, Kamada, Kazunori, Tsukada, Yusuke, Kubo, Shuichi
Year of Publication 08.06.2021
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Year of Publication 08.06.2021
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SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
NAGAO, Satoru, Ikeda, Hirotaka, Fujisawa, Hideo, Mikawa, Yutaka, Mochizuki, Tae, Fujito, Kenji, Kamada, Kazunori, Tsukada, Yusuke, Kubo, Shuichi
Year of Publication 09.01.2020
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Year of Publication 09.01.2020
Patent
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
Ikeda, Hirotaka, Nagao, Satoru, Fujisawa, Hideo, Mikawa, Yutaka, Mochizuki, Tae, Fujito, Kenji, Kamada, Kazunori, Tsukada, Yusuke, Kubo, Shuichi
Year of Publication 12.11.2019
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Year of Publication 12.11.2019
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SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
NAGAO, Satoru, MIKAWA, Yutaka, KAMADA, Kazunori, TSUKADA, Yusuke, IKEDA, Hirotaka, KUBO, Shuichi, FUJITO, Kenji, MOCHIZUKI, Tae, FUJISAWA, Hideo
Year of Publication 10.10.2019
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Year of Publication 10.10.2019
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GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODUCING GaN CRYSTAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
NAGAO, Satoru, MIKAWA, Yutaka, KAMADA, Kazunori, TSUKADA, Yusuke, KAJIMOTO, Tetsuharu, FUJITO, Kenji, TASHIRO, Masayuki, FUJISAWA, Hideo, FUKADA, Takashi
Year of Publication 22.11.2018
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Year of Publication 22.11.2018
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