Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar ( m -plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures
Tyagi, Anurag, Lin, You-Da, Cohen, Daniel A., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Applied physics express (01.09.2008)
Published in Applied physics express (01.09.2008)
Get full text
Journal Article
Seeded growth of GaN by the basic ammonothermal method
Hashimoto, Tadao, Saito, Makoto, Fujito, Kenji, Wu, Feng, Speck, James S., Nakamura, Shuji
Published in Journal of crystal growth (15.07.2007)
Published in Journal of crystal growth (15.07.2007)
Get full text
Journal Article
Conference Proceeding
Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
Gao, Yan, Fujii, Tetsuo, Sharma, Rajat, Fujito, Kenji, Denbaars, Steven P., Nakamura, Shuji, Hu, Evelyn L.
Published in Japanese Journal of Applied Physics (01.05.2004)
Published in Japanese Journal of Applied Physics (01.05.2004)
Get full text
Journal Article
Growth of gallium nitride via fluid transport in supercritical ammonia
Hashimoto, Tadao, Fujito, Kenji, Haskell, Benjamin A., Fini, Paul T., Speck, James S., Nakamura, Shuji
Published in Journal of crystal growth (15.02.2005)
Published in Journal of crystal growth (15.02.2005)
Get full text
Journal Article
Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates
Asamizu, Hirokuni, Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Applied physics express (01.09.2008)
Published in Applied physics express (01.09.2008)
Get full text
Journal Article
Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
Hashimoto, Tadao, Fujito, Kenji, Saito, Makoto, Speck, James S., Nakamura, Shuji
Published in Japanese Journal of Applied Physics (01.12.2005)
Published in Japanese Journal of Applied Physics (01.12.2005)
Get full text
Journal Article
Spatio-Time-Resolved Cathodoluminescence Studies on Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy
Chichibu, Shigefusa F, Ishikawa, Yoichi, Tashiro, Masanori, Hazu, Kouji, Furusawa, Kentaro, Namirta, Hideo, Nagao, Satoru, Fujito, Kenji, Uedono, Akira
Published in ECS transactions (01.04.2013)
Published in ECS transactions (01.04.2013)
Get full text
Journal Article
Phase selection of microcrystalline GaN synthesized in supercritical ammonia
Hashimoto, Tadao, Fujito, Kenji, Sharma, Rajat, Letts, Edward R., Fini, Paul T., Speck, James S., Nakamura, Shuji
Published in Journal of crystal growth (15.05.2006)
Published in Journal of crystal growth (15.05.2006)
Get full text
Journal Article
Blue InGaN/GaN laser diodes grown on (33$ bar 3 bar 1 $) free-standing GaN substrates
Hsu, Po Shan, Sonoda, Junichi, Kelchner, Kathryn M., Tyagi, Anurag, Farrell, Robert M., Haeger, Daniel A., Young, Erin C., Romanov, Alexey E., Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P., Speck, James S., Nakamura, Shuji
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
Get full text
Journal Article
High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
SATO, Hitoshi, HIRASAWA, Hirohiko, ASAMIZU, Hirokuni, FELLOWS, Natalie, TYAGI, Anurag, SAITO, Makoto, FUJITO, Kenji, SPECK, James S., DENBAARS, Steven P., NAKAMURA, Shuji
Published in Journal of Light & Visual Environment (2008)
Published in Journal of Light & Visual Environment (2008)
Get full text
Journal Article
Bulk GaN crystals grown by HVPE
Fujito, Kenji, Kubo, Shuichi, Nagaoka, Hirobumi, Mochizuki, Tae, Namita, Hideo, Nagao, Satoru
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
Get full text
Journal Article
Conference Proceeding
Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes
Hardy, M. T., Farrell, R. M., Hsu, Po S., Haeger, D. A., Kelchner, K., Fujito, Kenji, Chakraborty, Apran, Cohen, D. A., Nakamura, Shuji, Speck, J. S., DenBaars, St. P.
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
Get full text
Journal Article
Plane Dependent Growth of GaN in Supercritical Basic Ammonia
Saito, Makoto, Kamber, Derrick S., Baker, Troy J., Fujito, Kenji, DenBaars, Steven P., Speck, James S., Nakamura, Shuji
Published in Applied physics express (01.12.2008)
Published in Applied physics express (01.12.2008)
Get full text
Journal Article
Growth of AlN by the Chemical Vapor Reaction Process
Hashimoto, Tadao, Fujito, Kenji, Samonji, Katsuya, Speck, James S., Nakamura, Shuji
Published in Japanese Journal of Applied Physics (01.02.2005)
Published in Japanese Journal of Applied Physics (01.02.2005)
Get full text
Journal Article
Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates
Fujito, Kenji, Hashimoto, Tadao, Samonji, Katsuya, Speck, James S., Nakamura, Shuji
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
Get full text
Journal Article
Conference Proceeding
Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
Hashimoto, Tadao, Fujito, Kenji, Wu, Feng, Haskell, Benjamin A., Fini, Paul T., Speck, James S., Nakamura, Shuji
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
Get full text
Journal Article
Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
Fujii, Tetsuo, David, Aurelien, Schwach, Carole, Pattison, Paul Morgan, Sharma, Rajat, Fujito, Kenji, Margalith, Tal, Denbaars, Steven P., Weisbuch, Claude, Nakamura, Shuji
Published in Japanese Journal of Applied Physics (15.03.2004)
Published in Japanese Journal of Applied Physics (15.03.2004)
Get full text
Journal Article
High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}
Zhao, Yuji, Tanaka, Shinichi, Pan, Chih-Chien, Fujito, Kenji, Feezell, Daniel, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Applied physics express (01.08.2011)
Published in Applied physics express (01.08.2011)
Get full text
Journal Article
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar ($20\bar{2}1$) GaN Substrates
Yamamoto, Shuichiro, Zhao, Yuji, Pan, Chih-Chien, Chung, Roy B, Fujito, Kenji, Sonoda, Junichi, DenBaars, Steven P, Nakamura, Shuji
Published in Applied physics express (01.12.2010)
Published in Applied physics express (01.12.2010)
Get full text
Journal Article
Green Semipolar ($20\bar{2}\bar{1}$) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
Zhao, Yuji, Oh, Sang Ho, Wu, Feng, Kawaguchi, Yoshinobu, Tanaka, Shinichi, Fujito, Kenji, Speck, James S, DenBaars, Steven P, Nakamura, Shuji
Published in Applied physics express (01.06.2013)
Published in Applied physics express (01.06.2013)
Get full text
Journal Article