Scanning tunneling microscopy and ab initio studies of precursor states of Ga-induced cluster on Si(001) surface
HARA, Shinsuke, KOBAYASHI, Hidekazu, OTA, Kohei, NAGURA, Yuichiro, IROKAWA, Katsumi, FUJISHIRO, Hiroki Inomata, WATANABE, Kazuyuki, MIKI, Hirofumi, KAWAZU, Akira
Published in Surface science (2009)
Published in Surface science (2009)
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Journal Article
Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET
Fujishiro, Hiroki Inomata, Inokuchi, Kazuyuki, Nishi, Seiji, Sano, Yoshiaki
Published in Japanese Journal of Applied Physics (01.10.1989)
Published in Japanese Journal of Applied Physics (01.10.1989)
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Journal Article
Sidegating effects in inverted AlGaAs/GaAs HEMT
FUJISHIRO, H. I, SAITO, T, NISHI, S, SANO, Y
Published in Japanese Journal of Applied Physics (01.09.1988)
Published in Japanese Journal of Applied Physics (01.09.1988)
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Journal Article
A Sub-10 ps/gate Direct-Coupled FET Logic Circuit with 0.2 µm-Gate GaAs MESFET
Tsuji, Hiromi, Fujishiro, Hiroki Inomata, Nakamura, Hiroshi, Nishi, Seiji
Published in Japanese Journal of Applied Physics (01.12.1990)
Published in Japanese Journal of Applied Physics (01.12.1990)
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Journal Article
Scanning tunneling microscopy and abinitio studies of precursor states of Ga-induced cluster on Si(001) surface
Hara, Shinsuke, Kobayashi, Hidekazu, Ota, Kohei, Nagura, Yuichiro, Irokawa, Katsumi, Fujishiro, Hiroki Inomata, Watanabe, Kazuyuki, Miki, Hirofumi, Kawazu, Akira
Published in Surface science (01.01.2009)
Published in Surface science (01.01.2009)
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Journal Article
Nano-scale patterning on sulfur terminated GaAs (001) surface by scanning tunneling microscope
Yagishita, Yuki, Toda, Yusuke, Hirai, Masakazu, Fujishiro, Hiroki Inomata
Published in Applied surface science (15.10.2004)
Published in Applied surface science (15.10.2004)
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Conference Proceeding
Comparative study on noise characteristics of As and Sb-based HEMTs
Takahashi, Takuto, Hatsushiba, Shota, Fujikawa, Sachie, Fujishiro, Hiroki Inomata
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
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Conference Proceeding
Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier
Ohmuro, K., Fujishiro, H.I., Itoh, M., Nakamura, H., Nishi, S.
Published in IEEE transactions on microwave theory and techniques (01.12.1991)
Published in IEEE transactions on microwave theory and techniques (01.12.1991)
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Conference Proceeding
Pseudomorphic inverted HEMT suitable to low supplied voltage application
Kasashima, M., Arai, Y., Fujishiro, H.I., Nakamura, H., Nishi, S.
Published in IEEE transactions on microwave theory and techniques (01.12.1992)
Published in IEEE transactions on microwave theory and techniques (01.12.1992)
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Journal Article
A sub-10 ps/gate direct-coupled FET logic circuit with 0.2μm-gate GaAs MESFET
TSUJI, H, INOMATA FUJISHIRO, H, NAKAMURA, H, NISHI, S
Published in Japanese journal of applied physics (01.12.1990)
Published in Japanese journal of applied physics (01.12.1990)
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