Relationship between HMGB1 and PAI-1 after allogeneic hematopoietic stem cell transplantation
Nomura, Shosaku, Maeda, Yoshinobu, Ishii, Kazuyoshi, Katayama, Yuta, Yagi, Hideo, Fujishima, Naoto, Ota, Shuichi, Moriyama, Masato, Ikezoe, Takayuki, Miyazaki, Yasuhiko, Hayashi, Kunio, Fujita, Shinya, Satake, Atsushi, Ito, Tomoki, Kyo, Taiichi, Tanimoto, Mitsune
Published in Journal of blood medicine (01.01.2016)
Published in Journal of blood medicine (01.01.2016)
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Journal Article
Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2 Gate-Stack for SiC Power MOSFETs
Huang, Linhua, Liu, Yong, Peng, Xin, Onozawa, Yuichi, Tsuji, Takashi, Fujishima, Naoto, Sin, Johnny K. O.
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
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Journal Article
Static Performance and Threshold Voltage Stability Improvement of Al 2 O 3 /LaAlO 3 /SiO 2 Gate-Stack for SiC Power MOSFETs
Huang, Linhua, Liu, Yong, Peng, Xin, Onozawa, Yuichi, Tsuji, Takashi, Fujishima, Naoto, Sin, Johnny K. O.
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
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Journal Article
Characterization of Al 2 O 3 /LaAlO 3 /SiO 2 Gate Stack on 4H-SiC After Post-Deposition Annealing
Huang, Linhua, Liu, Yong, Xiao, Chao, Ding, Yixiao, Peng, Xin, Onozawa, Yuichi, Tsuji, Takashi, Fujishima, Naoto, Sin, Johnny K. O.
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Journal Article
Characterization of Al2O3/LaAlO3/SiO2 Gate Stack on 4H-SiC After Post-Deposition Annealing
Huang, Linhua, Liu, Yong, Xiao, Chao, Ding, Yixiao, Peng, Xin, Onozawa, Yuichi, Tsuji, Takashi, Fujishima, Naoto, Sin, Johnny K. O.
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Journal Article
Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices
Liu, Yong, Yang, Wentao, Feng, Hao, Huang, Linhua, Onozawa, Yuichi, Wakimoto, Setsuko, Fujishima, Naoto, Sin, Johnny K. O.
Published in IEEE transactions on electron devices (01.10.2019)
Published in IEEE transactions on electron devices (01.10.2019)
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Journal Article
Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices
Liu, Yong, Yang, Wentao, Feng, Hao, Onozawa, Yuichi, Wakimoto, Setsuko, Fujishima, Naoto, Sin, Johnny K.O.
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Improving Power Cycle Lifetime of SiC Power Modules with Double-Bonded Wire: Experimental and Simulation Analysis
Xiang, Enyao, Luo, Haoze, Yang, Huan, He, Xiangning, Fujishima, Naoto, Nishio, Haruhiko, Sumida, Hitoshi
Published in 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (04.09.2023)
Published in 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (04.09.2023)
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Conference Proceeding
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
OGINO, MASAAKI, TACHIOKA, MASAAKI, NAKAJIMA, TSUNEHIRO, IGUCHI, KENICHI, NAKAZAWA, HARUO, FUJISHIMA, NAOTO
Year of Publication 01.05.2014
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Year of Publication 01.05.2014
Patent
Analysis of Mutual Inductance Between Parallel Branches for ANPC Laminated Busbar
Hu, Sideng, Tahir, Mustafa, Niu, Jianfeng, Fujishima, Naoto, Lei, Yun, He, Xiangning
Published in 2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) (09.06.2023)
Published in 2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) (09.06.2023)
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Conference Proceeding
Design Method of Totem-Pole PFC and CLLC Resonant Converter Based on SiC MOSFET
Zhu, Haoqi, Hu, Sideng, Fujishima, Naoto, Onishi, Yasuhiko
Published in 2021 6th International Conference on Power and Renewable Energy (ICPRE) (17.09.2021)
Published in 2021 6th International Conference on Power and Renewable Energy (ICPRE) (17.09.2021)
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Conference Proceeding
Analysis for rapid tail current decay in IGBTs with low dose p-emitter
Kobayashi, Y., Nakagawa, A., Takei, M., Onishi, Y., Fujishima, N.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
Loop Height Effects on Bond Wire Reliability under Power cycling for SiC Power Module
Xiang, Enyao, Luo, Haoze, Yang, Huan, He, Xiangning, Fujishima, Naoto, Nishio, Haruhiko, Sumida, Hitoshi
Published in 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia) (22.05.2023)
Published in 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia) (22.05.2023)
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Conference Proceeding
Identification Method for Various Failure Modes with Shared Kelvin and Power Wires Configuration in IGBT Power Modules
Wu, Qiang, Chen, Yu, Luo, Haoze, Zhang, Jian, Li, Wuhua, He, Xiangning, Fujishima, Naoto, Nishio, Haruhiko, Sumida, Hitoshi
Published in 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia) (15.05.2022)
Published in 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia) (15.05.2022)
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Conference Proceeding
High side n-channel and bidirectional Trench Lateral Power MOSFETs on one chip for DCDC converter ICs
Sawada, M., Yamaji, M., Matsunaga, S., Iwaya, M., Takahashi, H., Yoshiki, T., Jonishi, A., Kitamura, A., Fujishima, N.
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
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Conference Proceeding