Search Results - "FUJIKURA HAJIME" :: K.UTB vyhledávací portál

Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers

by Yokoyama, Masafumi, Horikiri, Fumimasa, Mori, Hisashi, Konno, Taichiro, Fujikura, Hajime
Published in Applied physics express (01.05.2024)

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Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

by Kojima, Kazunobu, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Fujikura, Hajime, Chichibu, Shigefusa F.
Published in Applied physics express (01.01.2020)

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Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

by Hirukawa, Kazufumi, Sumida, Kensuke, Sakurai, Hideki, Fujikura, Hajime, Horita, Masahiro, Otoki, Yohei, Sierakowski, Kacper, Bockowski, Michal, Kachi, Tetsu, Suda, Jun
Published in Applied physics express (01.05.2021)

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Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

by Fujikura, Hajime, Hayashi, Kentaro, Horikiri, Fumimasa, Narita, Yoshinobu, Konno, Taichiro, Yoshida, Takehiro, Ohta, Hiroshi, Mishima, Tomoyoshi
Published in Applied physics express (01.04.2018)

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Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates

by Fujikura, Hajime, Oshima, Yuichi, Megro, Takeshi, Saito, Toshiya
Published in Journal of crystal growth (01.07.2012)

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Journal Article Conference Proceeding

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NITRIDE SEMICONDUCTOR LAMINATE AND SEMICONDUCTOR DEVICE

by FUJIKURA HAJIME
Year of Publication 22.04.2021

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Patent

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Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106cm−2 range by novel two-side hydride vapor-phase epitaxial growth

by Fujikura, Hajime, Konno, Taichiro
Published in Journal of crystal growth (01.10.2017)

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Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106 cm-2 range by novel two-side hydride vapor-phase epitaxial growth

by Fujikura, Hajime, Konno, Taichiro
Published in Journal of crystal growth (01.10.2017)

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Hydride vapor phase epitaxial growth of AlGaN

by Fujikura, Hajime, Konno, Taichiro, Kimura, Takeshi
Published in Applied physics express (01.08.2022)

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ALUMINUM NITRIDE LAMINATE MEMBER AND ALUMINUM NITRIDE LAYER

by FUJIKURA HAJIME
Year of Publication 31.08.2020

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Patent

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ALUMINUM NITRIDE LAMINATE MEMBER AND LIGHT-EMITTING DEVICE

by FUJIKURA HAJIME
Year of Publication 31.08.2020

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Patent

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

by Fujikura, Hajime, Konno, Taichiro, Yoshida, Takehiro, Horikiri, Fumimasa
Published in Japanese Journal of Applied Physics (01.08.2017)

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Journal Article

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NITRIDE SEMICONDUCTOR TEMPLATE AND DEVICE MANUFACTURED USING THE SAME

by FUJIKURA HAJIME
Year of Publication 14.11.2019

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Patent

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GaN LAMINATE AND METHOD FOR MANUFACTURING THE SAME

by FUJIKURA HAJIME
Year of Publication 12.09.2019

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Patent

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GaN LAMINATE AND METHOD FOR MANUFACTURING THE SAME

by FUJIKURA HAJIME
Year of Publication 12.09.2019

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Patent

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NITRIDE SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

by FUJIKURA HAJIME
Year of Publication 10.01.2019

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Patent

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NITRIDE SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR LAMINATE PRODUCTION METHOD, NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

by FUJIKURA Hajime
Year of Publication 20.12.2018

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Patent

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Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires

by Hasegawa, Hideki, Fujikura, Hajime, Okada, Hiroshi
Published in MRS bulletin (01.08.1999)

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Journal Article

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Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods

by Sumiya, Masatomo, Fujikura, Hajime, Nakano, Yoshitaka, Yashiro, Shuhei, Koide, Yasuo, Honda, Tohru
Published in Journal of crystal growth (01.06.2024)

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METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

by FUJIKURA HAJIME
Year of Publication 02.08.2018

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Patent

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