The D-band MMIC LNA circuit using 70nm InP HEMT technology
Yutong Wang, Hongjiang Wu, Jing Li, Xingchang Fu
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
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Conference Proceeding
Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs
Wang, Zhiming, Zhao, Zhuobin, Hu, Zhifu, Huang, Hui, Cui, Yuxing, Sun, Xiguo, Mo, Jianghui, Li, Liang, Fu, Xingchang, Lü, Xin
Published in Journal of semiconductors (01.08.2015)
Published in Journal of semiconductors (01.08.2015)
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Journal Article
An Advanced Calibration Method for Probe Leakage Correction in On-Wafer Test Systems
Wang, Yibang, Fu, Xingchang, Wu, Aihua, Huo, Ye, Liu, Chen, Luan, Peng, Lei, Lihua, Liang, Faguo, Li, Chong
Published in IEEE transactions on microwave theory and techniques (01.02.2023)
Published in IEEE transactions on microwave theory and techniques (01.02.2023)
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Journal Article
High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers
Zhang, Lisen, Liang, Shixiong, Lv, Yuanjie, Yang, Dabao, Fu, Xingchang, Song, Xubo, Gu, Guodong, Xu, Peng, Guo, Yanmin, Bu, Aimin, Feng, Zhihong, Cai, Shujun
Published in IEEE electron device letters (01.11.2021)
Published in IEEE electron device letters (01.11.2021)
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Journal Article
GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz
Song, Xubo, Liang, Shixiong, Lv, Yuanjie, Zhang, Zhenpeng, Zhang, Lisen, Fu, Xingchang, Guo, Yanmin, Gu, Guodong, Wang, Yuangang, Fang, Yuan, Bu, Aimin, Cai, Shujun, Feng, Zhihong
Published in IEEE electron device letters (01.12.2021)
Published in IEEE electron device letters (01.12.2021)
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Journal Article
2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2
Wang, Yuan, Gong, Hehe, Lv, Yuanjie, Fu, Xingchang, Dun, Shaobo, Han, Tingting, Liu, Hongyu, Zhou, Xingye, Liang, Shixiong, Ye, Jiandong, Zhang, Rong, Bu, Aimin, Cai, Shujun, Feng, Zhihong
Published in IEEE transactions on power electronics (01.04.2022)
Published in IEEE transactions on power electronics (01.04.2022)
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Journal Article
2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2
Wang, Yuan, Gong, Hehe, Lv, Yuanjie, Fu, Xingchang, Dun, Shaobo, Han, Tingting, Liu, Hongyu, Zhou, Xingye, Liang, Shixiong, Ye, Jiandong, Zhang, Rong, Bu, Aimin, Cai, Shujun, Feng, Zhihong
Published in IEEE transactions on power electronics (01.04.2022)
Published in IEEE transactions on power electronics (01.04.2022)
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Journal Article
LncRNA-ROR/microRNA-185-3p/YAP1 axis exerts function in biological characteristics of osteosarcoma cells
Wang, Weiguo, Li, Yuezhan, Zhi, Shuang, Li, Jinsong, Miao, Jinglei, Ding, Zhiyu, Peng, Yi, Huang, Yan, Zheng, Ruping, Yu, Haiyang, Qi, Pei, Wang, Jianlong, Fu, Xingchang, Hu, Minghua, Chen, Shijie
Published in Genomics (San Diego, Calif.) (01.01.2021)
Published in Genomics (San Diego, Calif.) (01.01.2021)
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Journal Article
Demonstration of β-Ga 2 O 3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm 2 or a 5A/700 V Handling Capabilities
Lv, Yuanjie, Wang, Yuangang, Fu, Xingchang, Dun, Shaobo, Sun, Zhaofeng, Liu, Hongyu, Zhou, Xingye, Song, Xubo, Dang, Kui, Liang, Shixiong, Zhang, Jincheng, Zhou, Hong, Feng, Zhihong, Cai, Shujun, Hao, Yue
Published in IEEE transactions on power electronics (01.06.2021)
Published in IEEE transactions on power electronics (01.06.2021)
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Journal Article
Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
Lv, Yuanjie, Wang, Yuangang, Fu, Xingchang, Dun, Shaobo, Sun, Zhaofeng, Liu, Hongyu, Zhou, Xingye, Song, Xubo, Dang, Kui, Liang, Shixiong, Zhang, Jincheng, Zhou, Hong, Feng, Zhihong, Cai, Shujun, Hao, Yue
Published in IEEE transactions on power electronics (01.06.2021)
Published in IEEE transactions on power electronics (01.06.2021)
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Journal Article
Implementation of mmWave AlGaN/GaN HEMTs and Power Amplifier MMICs
Xiaobin, Luo, Dechun, Guo, Weihua, Yu, Xin, Lv, Yuxing, Cui, Xingchang, Fu, Jianghui, Mo, Zhifu, Hu, Dawei, He
Published in Microwave Journal (01.02.2015)
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Published in Microwave Journal (01.02.2015)
Trade Publication Article
Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band
Wang, Yibang, Fu, Xingchang, Wu, Aihua, Liu, Chen, Luan, Peng, Liang, Faguo, Zhao, Wei, Shang, Xiaobang
Published in International journal of microwave and wireless technologies (01.06.2020)
Published in International journal of microwave and wireless technologies (01.06.2020)
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Journal Article
Ka band High RF performance AlGaN/GaN HEMTs
Zhang, Lijiang, Fu, Xingchang, Du, Pengbo, Cui, Yuxing, Li, Xianjie, Zhang, Tong
Published in IOP conference series. Earth and environmental science (01.07.2018)
Published in IOP conference series. Earth and environmental science (01.07.2018)
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Journal Article
Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTsProject supported by the National Natural Science Foundation of China (No. 61275107)
Wang, Zhiming, Zhao, Zhuobin, Hu, Zhifu, Huang, Hui, Cui, Yuxing, Sun, Xiguo, Mo, Jianghui, Li, Liang, Fu, Xingchang, Lü, Xin
Published in Journal of semiconductors (01.08.2015)
Published in Journal of semiconductors (01.08.2015)
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Journal Article
A Novel Enhancement-Mode AlGaN/GaN HFET with Double-Barrier Gates-Separating Groove
Fu, Xingchang, Lv, Yuanjie, Zhang, Lijiang, Li, Xianjie, Zhang, Tong
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
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Conference Proceeding
Preparation method of GaN field effect transistor based on diamond substrate
Dun, Shaobo, Guo, Hongyu, Feng, Zhihong, Liang, Shixiong, Song, Xubo, Wang, Yuangang, Fu, Xingchang, Lv, Yuanjie
Year of Publication 08.10.2024
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Year of Publication 08.10.2024
Patent
Preparation Method of GaN Field Effect Transistor Based on Diamond Substrate
Dun, Shaobo, Guo, Hongyu, Feng, Zhihong, Liang, Shixiong, Song, Xubo, Wang, Yuangang, Fu, Xingchang, Lv, Yuanjie
Year of Publication 11.08.2022
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Year of Publication 11.08.2022
Patent
Method for preparing ohmic contact electrode of gallium nitride-based device
Fu, Xingzhong, Tan, Yongliang, Hu, Zexian, Zhang, Lijiang, Liu, Xiangwu, Cui, Yuxing, Fu, Xingchang
Year of Publication 01.02.2022
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Year of Publication 01.02.2022
Patent