Critical layer thickness in AlGaAsSb/GaSb heterostructures determined by X-ray diffraction
LAZZARI, J. L, FOUILLANT, C, GRUNBERG, P, LECLERCQ, J. L, JOULLIE, A, SCHILLER, C
Published in Journal of crystal growth (01.05.1993)
Published in Journal of crystal growth (01.05.1993)
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Journal Article
Method for recycling unsymmetrical dimethylhydrazine waste liquid
WEI XIONGXIONG, YANG LING, LI JUNFENG, WANG LONGLONG, ZHAO JUNLONG, FOUILLANT, ZHAO BIHONG, CAI YANQIAO, CHENG YUAN, CHEN XINGLIANG, ZHU CHENGCAI, XIA JIJUN
Year of Publication 27.12.2022
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Year of Publication 27.12.2022
Patent
Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications
Tournié, Eric, Grunberg, Patrick, Fouillant, Catherine, Baranov, Alexei, Joullié, André, Ploog, Klaus H.
Published in Solid-state electronics (01.04.1994)
Published in Solid-state electronics (01.04.1994)
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Journal Article
Critical layer thickness in AlGaAsSbGaSb heterostructures determined by X-ray diffraction
Lazzari, J.L., Fouillant, C., Grunberg, P., Leclercq, J.L., Joullié, A., Schiller, C.
Published in Journal of crystal growth (01.05.1993)
Published in Journal of crystal growth (01.05.1993)
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Journal Article
Strained InAs/Ga 0.47In 0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications
Tournié, Eric, Grunberg, Patrick, Fouillant, Catherine, Baranov, Alexei, Joullié, André, Ploog, Klaus H.
Published in Solid-state electronics (1994)
Published in Solid-state electronics (1994)
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Journal Article
GalnAsSb injection lasers operating near 2.1 /spl mu/m up to 130/spl deg/C
Baranov, A., Fouillant, C., Boissier, G., Grech, P., Gaillard, S., Alibert, C., Joullie, A.
Published in Conference on Lasers and Electro-Optics Europe (1994)
Published in Conference on Lasers and Electro-Optics Europe (1994)
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Conference Proceeding