Search Results - "FLORIAN BEUG, M" :: K.UTB vyhledávací portál

Investigation of Program Saturation in Scaled Interpoly Dielectric Floating-Gate Memory Devices

by Beug, M.F., Chan, N., Hoehr, T., Mueller-Meskamp, L., Specht, M.
Published in IEEE transactions on electron devices (01.08.2009)

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Bridge Amplifier Linearity Investigation with a Cascaded Inductive Voltage Divider Setup

by Beug, M. Florian, Moser, Harald, Kölling, Axel
Published in Journal of physics. Conference series (01.08.2018)

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A New Calibration Transformer and Measurement Setup for Bridge Standard Calibrations Up To 5 kHz

by Beug, M. Florian, Kolling, Axel, Moser, Harald
Published in IEEE transactions on instrumentation and measurement (01.06.2017)

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New Setup for Bridge Amplifier Linearity Investigation

by Beug, M. Florian, Moser, Harald, Kolling, Axel
Published in 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) (01.07.2018)

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TaN and Al2O3 Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS NAND Flash Memory Cells

by FLORIAN BEUG, M, MELDE, Thomas, PAUL, Jan, KNOEFLER, Roman
Published in IEEE transactions on electron devices (01.06.2011)

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Analysis of TANOS Memory Cells With Sealing Oxide Containing Blocking Dielectric

by Florian Beug, M, Melde, Thomas, Czernohorsky, Malte, Hoffmann, Raik, Paul, Jan, Knoefler, Roman, Tilke, Armin T
Published in IEEE transactions on electron devices (01.07.2010)

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Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells

by Beug, M Florian, Rafhay, Quentin, van Duuren, Michiel J, Duane, Russell
Published in IEEE transactions on electron devices (01.06.2010)

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$TaN and \hbox\hbox Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells$

TaN and \hbox\hbox Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells

by Beug, M F, Melde, T, Paul, J, Knoefler, R
Published in IEEE transactions on electron devices (01.06.2011)

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Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells

by Beug, M F, Tempel, G, Hofmann, K R
Published in IEEE transactions on electron devices (01.03.2011)

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Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

by Rafhay, Quentin, Beug, M. Florian, Duane, Russell
Published in Solid-state electronics (01.04.2007)

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Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxides

by Florian Beug, M., Ferretti, Rüdiger, Hofmann, Karl R.
Published in Microelectronic engineering (17.06.2005)

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Thermal hysteresis of travelling inductance standards

by Callegaro, Luca, D'Elia, Vincenzo, Marzano, Martina, Ortolano, Massimo, Beug, M. Florian, Bothe, Harald
Published in 2024 Conference on Precision Electromagnetic Measurements (CPEM) (08.07.2024)

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TaN and [Formula Omitted] Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells

by Beug, M. Florian, Melde, Thomas, Paul, Jan, Knoefler, Roman
Published in IEEE transactions on electron devices (01.06.2011)

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Improved setup for bridge standard calibration up to 5 kHz

by Beug, M. Florian, Moser, Harald, Kolling, Axel
Published in 2016 Conference on Precision Electromagnetic Measurements (CPEM 2016) (01.07.2016)

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Calibration of a two-stage coaxial inductive voltage divider for use between 1 kHz and 100 kHz

by Beug, M. Florian, Moser, Harald
Published in 29th Conference on Precision Electromagnetic Measurements (CPEM 2014) (01.08.2014)

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Dynamic bridge standard for strain gauge bridge amplifier calibration

by Beug, M. F., Moser, H., Ramm, G.
Published in 2012 Conference on Precision electromagnetic Measurements (01.07.2012)

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Novel capacitance coupling coefficient measurement methodology for floating gate nonvolatile memory devices

by Duane, R., Beug, M.F., Mathewson, A.
Published in IEEE electron device letters (01.07.2005)

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Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

by Duane, R., Rafhay, Q., Beug, M.F., van Duuren, M.
Published in IEEE electron device letters (01.05.2007)

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A modified constant field charge pumping method for sensitive profiling of near-junction charges

by von Emden, W., Krautschneider, W., Tempel, G., Hagenbeck, R., Beug, M.F.
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)

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Nitride Thickness Scaling Limitations in TANOS Charge Trapping Devices

by Melde, T., Beug, M.F., Bach, L., Riedel, S., Ludwig, C., Mikolaijck, T.
Published in 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (01.05.2008)

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