Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Galazka, Zbigniew, Ganschow, Steffen, Schewski, Robert, Irmscher, Klaus, Klimm, Detlef, Kwasniewski, Albert, Pietsch, Mike, Fiedler, Andreas, Schulze-Jonack, Isabelle, Albrecht, Martin, Schröder, Thomas, Bickermann, Matthias
Published in APL materials (01.02.2019)
Published in APL materials (01.02.2019)
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Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory
Seyidov, Palvan, Varley, Joel B., Galazka, Zbigniew, Chou, Ta-Shun, Popp, Andreas, Fiedler, Andreas, Irmscher, Klaus
Published in APL materials (01.11.2022)
Published in APL materials (01.11.2022)
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Feasibility of a Complex Setting for Assessing Sleep and Circadian Rhythmicity in a Fragile X Cohort
Dueck, Alexander, Reis, Olaf, Bastian, Manuela, van Treeck, Lucas, Weirich, Steffen, Haessler, Frank, Fiedler, Andreas, Koelch, Michael, Berger, Christoph
Published in Frontiers in psychiatry (14.05.2020)
Published in Frontiers in psychiatry (14.05.2020)
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Effects of Sequential Ligation of Molybdenum Cation by Chalcogenides on Electronic Structure and Gas-Phase Reactivity
Kretzschmar, Ilona, Fiedler, Andreas, Harvey, Jeremy N, Schröder, Detlef, Schwarz, Helmut
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (28.08.1997)
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (28.08.1997)
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Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
Baldini, Michele, Albrecht, Martin, Fiedler, Andreas, Irmscher, Klaus, Klimm, Detlef, Schewski, Robert, Wagner, Günter
Published in Journal of materials science (01.04.2016)
Published in Journal of materials science (01.04.2016)
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Journal Article
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs
Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Fitch, Robert C., Baldini, Michele, Fiedler, Andreas, Irmscher, Klaus, Wagner, Gunter, Galazka, Zbigniew, Tetlak, Stephen E., Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.
Published in IEEE electron device letters (01.07.2016)
Published in IEEE electron device letters (01.07.2016)
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Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions
Galazka, Zbigniew, Irmscher, Klaus, Schewski, Robert, Hanke, Isabelle M., Pietsch, Mike, Ganschow, Steffen, Klimm, Detlef, Dittmar, Andrea, Fiedler, Andreas, Schroeder, Thomas, Bickermann, Matthias
Published in Journal of crystal growth (01.01.2020)
Published in Journal of crystal growth (01.01.2020)
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Journal Article
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Galazka, Zbigniew, Ganschow, Steffen, Fiedler, Andreas, Bertram, Rainer, Klimm, Detlef, Irmscher, Klaus, Schewski, Robert, Pietsch, Mike, Albrecht, Martin, Bickermann, Matthias
Published in Journal of crystal growth (15.03.2018)
Published in Journal of crystal growth (15.03.2018)
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Experimental and theoretical studies toward a characterization of conceivable intermediates involved in the gas-phase oxidation of methane by bare FeO+. Generation of four distinguishable [Fe,C,H4,O]+ isomers
Schroeder, Detlef, Fiedler, Andreas, Hrusak, Jan, Schwarz, Helmut
Published in Journal of the American Chemical Society (01.02.1992)
Published in Journal of the American Chemical Society (01.02.1992)
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Early post-convulsive prolongation of QT time in children
Kändler, Liane, Fiedler, Andreas, Scheer, Katrin, Wild, Florentine, Frick, Ulrich, Schneider, Peter
Published in Acta Paediatrica (01.09.2005)
Published in Acta Paediatrica (01.09.2005)
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Journal Article
Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches
Chou, Ta-Shun, Rehm, Jana, Bin Anooz, Saud, Ernst, Owen, Akhtar, Arub, Galazka, Zbigniew, Miller, Wolfram, Albrecht, Martin, Seyidov, Palvan, Fiedler, Andreas, Popp, Andreas
Published in Journal of applied physics (21.11.2023)
Published in Journal of applied physics (21.11.2023)
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Journal Article
Properties of a highly compensated high-purity germanium
Palleti, Pradeep Chandra, Seyidov, Palvan, Gybin, Alexander, Pietsch, Mike, Juda, Uta, Fiedler, Andreas, Irmscher, Klaus, Sumathi, R. Radhakrishnan
Published in Journal of materials science. Materials in electronics (2024)
Published in Journal of materials science. Materials in electronics (2024)
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Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing
Tetzner, Kornelius, Thies, Andreas, Seyidov, Palvan, Chou, Ta-Shun, Rehm, Jana, Ostermay, Ina, Galazka, Zbigniew, Fiedler, Andreas, Popp, Andreas, Würfl, Joachim, Hilt, Oliver
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01.07.2023)
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01.07.2023)
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Journal Article
Charge state transition levels of Ni in β-Ga2O3 crystals from experiment and theory: An attractive candidate for compensation doping
Seyidov, Palvan, Varley, Joel B., Shen, Jimmy-Xuan, Galazka, Zbigniew, Chou, Ta-Shun, Popp, Andreas, Albrecht, Martin, Irmscher, Klaus, Fiedler, Andreas
Published in Journal of applied physics (28.11.2023)
Published in Journal of applied physics (28.11.2023)
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Journal Article
Influencing the morphological stability of MOVPE-grown β-Ga2O3 films by O2/Ga ratio
Chou, Ta-Shun, Akhtar, Arub, Bin Anooz, Saud, Rehm, Jana, Ernst, Owen, Seyidov, Palvan, Fiedler, Andreas, Miller, Wolfram, Galazka, Zbigniew, Remmele, Thilo, Albrecht, Martin, Popp, Andreas
Published in Applied surface science (01.07.2024)
Published in Applied surface science (01.07.2024)
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Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium Ingots
Subramanian, Aravind, Abrosimov, Nikolay, Gybin, Alexander, Guguschev, Christo, Juda, Uta, Fiedler, Andreas, Bärwolf, Florian, Costina, Ioan, Kwasniewski, Albert, Dittmar, Andrea, Sumathi, R. Radhakrishnan
Published in Journal of electronic materials (01.08.2023)
Published in Journal of electronic materials (01.08.2023)
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