Graphene formed on SiC under various environments: comparison of Si-face and C-face
Srivastava, N, He, Guowei, Luxmi, Mende, P C, Feenstra, R M, Sun, Yugang
Published in Journal of physics. D, Applied physics (18.04.2012)
Published in Journal of physics. D, Applied physics (18.04.2012)
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Journal Article
Formation of a Buffer Layer for Graphene on C-Face SiC{0001}
He, Guowei, Srivastava, N., Feenstra, R. M.
Published in Journal of electronic materials (01.04.2014)
Published in Journal of electronic materials (01.04.2014)
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Journal Article
Conference Proceeding
Structure and electronic spectroscopy of steps on GaAs(110) surfaces
Gaan, S., Feenstra, R.M., Ebert, Ph, Dunin-Borkowski, R.E., Walker, J., Towe, E.
Published in Surface science (2012)
Published in Surface science (2012)
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Journal Article
Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces
Nie, S., Lee, C.D., Feenstra, R.M., Ke, Y., Devaty, R.P., Choyke, W.J., Inoki, C.K., Kuan, T.S., Gu, Gong
Published in Surface science (01.09.2008)
Published in Surface science (01.09.2008)
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Journal Article
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
Ramachandran, V., Brady, M. F., Smith, A. R., Feenstra, R. M., Greve, D. W.
Published in Journal of electronic materials (01.04.1998)
Published in Journal of electronic materials (01.04.1998)
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Journal Article
Dislocation density reduction in GaN using porous SiN interlayers
Sagar, Ashutosh, Feenstra, R. M., Inoki, C. K., Kuan, T. S., Fu, Y., Moon, Y. T., Yun, F., Morkoç, H.
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
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Journal Article
Growth of GaN on porous SiC and GaN substrates
INOKI, C. K, KUAN, T. S, LEE, C. D, SAGAR, Ashutosh, FEENSTRA, R. M, KOLESKE, D. D, DIAZ, D. J, BOHN, P. W, ADESIDA, I
Published in Journal of electronic materials (01.08.2003)
Published in Journal of electronic materials (01.08.2003)
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Conference Proceeding
Journal Article
Molecular dynamics and first-principles computations of Ga adlayers on GaN(0001)
Rinehimer, J. A., Widom, M., Northrup, J. E., Feenstra, R. M.
Published in Physica Status Solidi (b) (01.05.2008)
Published in Physica Status Solidi (b) (01.05.2008)
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Journal Article
Conference Proceeding