Optical activation of Er3+ implanted in silicon by oxygen impurities
FAVENNEC, P. N, L'HARIDON, H, MOUTONNET, D, SALVI, M, GAUNEAU, M
Published in Japanese journal of applied physics (1990)
Published in Japanese journal of applied physics (1990)
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Journal Article
Crystalline characterization by Rutherford backscattering spectrometry and electron channeling of in situ grown YBa2Cu3O7 thin films deposited on (100) MgO by d.c. sputtering or laser ablation
KECHOUANE, M, L'HARIDON, H, SALVI, M, FAVENNEC, P. N, GAUNEAU, M, GUILLOUX-VIRY, M, KARKUT, M. G, THIVET, C, PERRIN, A
Published in Journal of materials science (01.01.1993)
Published in Journal of materials science (01.01.1993)
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Journal Article
A composite layer of Al-Er-O particles in a silicon matrix
SALVI, M, L'HARIDON, H, FAVENNEC, P. N, MOUTONNET, D, GAUNEAU, M, KECHOUANE, M
Published in Journal of the Electrochemical Society (01.06.1991)
Published in Journal of the Electrochemical Society (01.06.1991)
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Journal Article
Scanning photoluminescence technique: application to defect recovery of ion-implanted InP
L'Haridon, H, Favennec, P N, Salvi, M
Published in Semiconductor science and technology (01.01.1992)
Published in Semiconductor science and technology (01.01.1992)
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Journal Article
Erbium implanted in III-V materials
ROCHAIX, C, ROLLAND, A, FAVENNEC, P. N, LAMBERT, B, LE CORRE, A, L'HARIDON, H, SALVI, M
Published in Japanese Journal of Applied Physics (01.12.1988)
Published in Japanese Journal of Applied Physics (01.12.1988)
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Journal Article
Optical Activation of Er 3+ Implanted in Silicon by Oxygen Impurities
Favennec, P. N., L'Haridon, H., Moutonnet, D., Salvi, M., Gauneau, M.
Published in Japanese Journal of Applied Physics (01.04.1990)
Published in Japanese Journal of Applied Physics (01.04.1990)
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Journal Article
Spatial investigation of an iron-doped indium phosphide ingot
L'Haridon, H., Favennec, P.N., Coquille, R., Salvi, M., Gauneau, M., Le Guillou, Y., Callec, R., Gall, P.
Published in Applied surface science (01.06.1991)
Published in Applied surface science (01.06.1991)
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Journal Article
Conference Proceeding
Behaviour of erbium implanted in InP
ROCHAIX, C, ROLLAND, A, FAVENNEC, P. N, LAMBERT, B, LE CORRE, A, L'HARIDON, H, SALVI, M
Published in Journal of electronic materials (01.09.1988)
Published in Journal of electronic materials (01.09.1988)
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Journal Article
Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
Favennec, P.N., L'Haridon, H., Coquillé, R., Salvi, M., Gauneau, M., Roizes, A., David, J.P., Krawczyk, S.K., Longères, J.Y.
Published in Journal of crystal growth (01.06.1990)
Published in Journal of crystal growth (01.06.1990)
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Journal Article
Conference Proceeding
Inhomogeneity in a semi-insulating indium phosphide ingot
L'Haridon, H., Callec, R., Coquillé, R., Favennec, P.N., Fillard, J.P., Gall, P., Gauneau, M., Le Guillou, Y.
Published in Journal of crystal growth (1991)
Published in Journal of crystal growth (1991)
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Journal Article
Observation of cellular structures of defects in semi-insulating InP-Fe
Fillard, J.P., Baroudi, A., Gall, P., Bonnafe, J., Favennec, P.N., Coquille, R.
Published in Solid state communications (1987)
Published in Solid state communications (1987)
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Journal Article
Diffusion of zinc into ion implanted iron doped indium phosphide
Favennec, P.N., Henry, L., Salvi, M., Hubert, A.M., Morillot, G.
Published in Solid-state electronics (01.01.1983)
Published in Solid-state electronics (01.01.1983)
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Journal Article
High Performance Schottky Diode and FET on InP
Loualiche, S., Ginoudi, A., L'Haridon, H., Salvi, M., Le Corre, A., Lecrosnier, D., Favennec, P.N.
Published in ESSDERC '88: 18th European Solid State Device Research Conference (01.09.1988)
Published in ESSDERC '88: 18th European Solid State Device Research Conference (01.09.1988)
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Conference Proceeding
Photoluminescence studies of Mg and Hg implanted Ga0.47In0.53As
Louati, A., Charreaux, C., Nouailhat, A., Guillot, G., Favennec, P.N., Salvi, M.
Published in Solid state communications (01.04.1987)
Published in Solid state communications (01.04.1987)
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Journal Article
n +-InP(silicon implanted)/p-InP homojunction: Minority carrier diffusion length in the implanted layer
Gouskov, L., Conjeaud, A.L., Dhouib, A., Favennec, P.N., Salvi, M., L'Haridon, H., Bastide, G., Bayaa, D.
Published in Solar cells (01.01.1984)
Published in Solar cells (01.01.1984)
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Journal Article