Effect of fluorine implantation dose on boron thermal diffusion in silicon
El Mubarek, H. A. W., Bonar, J. M, Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., Wang, Y., Hemment, P. L. F., Price, R., Zhang, J., Ward, P.
Published in Journal of applied physics (15.10.2004)
Published in Journal of applied physics (15.10.2004)
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Journal Article
Potability Evaluation of Selected River Waters in Ebonyi State, Nigeria
Awu, JI, Ogunjirin, OA, Willoughby, FA, Adewumi, AA
Published in Nigerian Journal of Technological Development (01.06.2015)
Published in Nigerian Journal of Technological Development (01.06.2015)
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Journal Article
Zinc diffusion tellurium doped gallium antimonide
CONIBEER, G. J, WILLOUGHBY, A. F. B, HARDINGHAM, C. M, SHARMA, V. K. M
Published in Journal of electronic materials (01.07.1996)
Published in Journal of electronic materials (01.07.1996)
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Conference Proceeding
Journal Article
Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si1-xGex
EL MUBAREK, H. A. W, KARUNARATNE, M, BONAR, J. M, DILLIWAY, G. D, WANG, Y, HEMMENT, P. L. F, WILLOUGHBY, A. F, ASHBURN, P
Published in IEEE transactions on electron devices (01.04.2005)
Published in IEEE transactions on electron devices (01.04.2005)
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Journal Article
Diffusion of boron in heavily doped n- and p-type silicon
WILLOUGHBY, A. F. W, EVANS, A. G. R, CHAMP, P, YALLUP, K. J, GODFREY, D. J, DOWSETT, M. G
Published in Journal of applied physics (1986)
Published in Journal of applied physics (1986)
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Journal Article
Self-diffusion in gallium arsenide
PALFREY, H. D, BROWN, M, WILLOUGHBY, A. F. W
Published in Journal of electronic materials (01.09.1983)
Published in Journal of electronic materials (01.09.1983)
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Journal Article
Antimony and boron diffusion in SiGe and Si under the influence of injected point defects
Bonar, J M, Willoughby, A F; W, Dan, A H, Mcgregor, B M, Lerch, W, Loeffelmacher, D, Cooke, G A, Dowsett, M G
Published in Journal of materials science. Materials in electronics (01.06.2001)
Published in Journal of materials science. Materials in electronics (01.06.2001)
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Journal Article
Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high-resolution micro-Raman spectroscopy
CHEN, W. M, MCNALLY, P. J, DILLIWAY, G. D. M, BONAR, J, TUOMI, T, WILLOUGHBY, A. F. W
Published in Journal of materials science. Materials in electronics (01.05.2003)
Published in Journal of materials science. Materials in electronics (01.05.2003)
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Conference Proceeding
Journal Article
Growth method, composition, and defect structure dependence of mercury diffusion in CdxHg1-xTe
ARCHER, N. A, PALFREY, H. D, WILLOUGHBY, A. F. W
Published in Journal of electronic materials (01.08.1993)
Published in Journal of electronic materials (01.08.1993)
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Conference Proceeding
Journal Article
A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurements
Willoughby, A. F. W., Driscoll, C. M. H., Bellamy, B. A.
Published in Journal of materials science (01.11.1971)
Published in Journal of materials science (01.11.1971)
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Journal Article
Boron diffusion across silicon–silicon germanium boundaries
Lever, R. F., Bonar, J. M., Willoughby, A. F. W.
Published in Journal of applied physics (15.02.1998)
Published in Journal of applied physics (15.02.1998)
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Journal Article